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Infineon
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| Part No. |
BUZ100S-4
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| OCR Text |
...t A
ID IDpuls
32
TA = 25 C
Pulsed drain current one channel active
TA = 25 C
Avalanche energy, single pulse
EAS
380 dv/dt 6
...4
V W
TA = 25 C
Operating temperature Storage temperature IEC climatic category, DIN IEC 68-1... |
| Description |
Quad-Channel SIPMOS Power Transistor SIPMOS ? Power Transistor
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| File Size |
89.37K /
8 Page |
View
it Online |
Download Datasheet
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http:// Siemens Semiconductor Group Infineon Technologies AG SIEMENS AG
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| Part No. |
BUZ100SL-4
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| OCR Text |
...A
ID IDpuls
29.6
TA = 25 C
Pulsed drain current one channel active
TA = 25 C
Avalanche energy, single pulse
EAS
380 dv/dt 6
mJ
ID = 7.4 A, VDD = 25 V, RGS = 25 L = 13.8 mH, Tj = 25 C
Reverse diode dv/dt kV/s
IS = ... |
| Description |
Quad-Channel SIPMOS Power Transistor SIPMOS ? Power Transistor SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28 20 characters x 1 Lines, 5x7 Dot Matric Character and Cursor 7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
88.47K /
8 Page |
View
it Online |
Download Datasheet
|
| |
|
 |

http:// Siemens Semiconductor Group Infineon Technologies AG SIEMENS AG
|
| Part No. |
BUZ101SL-4
|
| OCR Text |
...A
ID IDpuls
16.4
TA = 25 C
Pulsed drain current one channel active
TA = 25 C
Avalanche energy, single pulse
EAS
90 dv/dt 6
mJ
ID = 4.1 A, VDD = 25 V, RGS = 25 L = 10.7 mH, Tj = 25 C
Reverse diode dv/dt kV/s
IS = 4... |
| Description |
Quad-Channel SIPMOS Power Transistor SIPMOS ? Power Transistor 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28 SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
89.10K /
8 Page |
View
it Online |
Download Datasheet
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|
 |
Excelics Semiconductor
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| Part No. |
EIC8596-4
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| OCR Text |
...cal characteristics (t a = 25 c) symbol parameters/test conditions 1 min typ max units p 1db output power at 1db compression f = 8....4.0 v r th thermal resistance 3 5.0 6.0 o c/w notes: 1. tested with 100 ohm gate resis... |
| Description |
Internally Matched Power FET
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| File Size |
204.14K /
4 Page |
View
it Online |
Download Datasheet
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| |
|
 |

SIEMENS AG Infineon Technologies AG
|
| Part No. |
BUZ102S-4
|
| OCR Text |
...A
ID IDpuls
25.6
TA = 25 C
Pulsed drain current one channel active
TA = 25 C
Avalanche energy, single pulse
EAS
245 dv/dt 6
mJ
ID = 6.4 A, VDD = 25 V, RGS = 25 L = 12 mH, Tj = 25 C
Reverse diode dv/dt kV/s
IS = 6.... |
| Description |
6.4 A, 55 V, 0.028 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28 SIPMOS ? Power Transistor Quad-Channel SIPMOS Power Transistor
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| File Size |
91.45K /
8 Page |
View
it Online |
Download Datasheet
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Price and Availability
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