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  BT138B-800E Datasheet PDF File

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Part No. 800EXH22
Description 800 A, 2500 V, SILICON, RECTIFIER DIODE

File Size 51.47K  /  2 Page

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Texas Instruments

Part No. PCM1800E/2K
Description 95dB SNR Stereo ADC with Single-Ended Inputs 24-SSOP
Tech specs    

Official Product Page

HUA FENG CIRCUIT





    APC5800E

Aplus Intergrated Circuits
Apuls Intergrated Circuits
Aplus Integrated Circuits Inc.
Part No. APC5800E
Description DE-COMPRESSION VOICE IC
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:19-35 RoHS Compliant: No

File Size 256.00K  /  10 Page

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Texas Instruments

Part No. PCM1800E
Description 95dB SNR Stereo ADC with Single-Ended Inputs 24-SSOP
Tech specs    

Official Product Page

    NXP Semiconductors N.V.
Part No. BT136-800E BT136-800E127
Description 4Q Triac 4Q双向可控
Triacs sensitive gate - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 800 V; Package: week 1, 2005

File Size 120.34K  /  13 Page

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    CM800E2Z-66H CM8.0E2Z-66H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM800E2Z-66H CM8.0E2Z-66H
Description 800 A, 3300 V, N-CHANNEL IGBT
HIGH POWER SWITCHING USE
From old datasheet system

File Size 47.43K  /  4 Page

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    Mitsubishi Electric Corporation
Part No. CM800E2Z-66H
Description High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules

File Size 52.87K  /  4 Page

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    Mitsubishi Electric
Part No. CM800E2C-66H
Description 2nd-Version HVIGBT Modules

File Size 76.04K  /  4 Page

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    BTA312-800ET BTA312-600CT BTA312

NXP Semiconductors N.V.
NXP[NXP Semiconductors]
Part No. BTA312-800ET BTA312-600CT BTA312
Description 12 A Three-quadrant triacs high commutation high temperature

File Size 72.34K  /  12 Page

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    BTA312X-600D BTA312X-600E BTA312X-800E

NXP Semiconductors
Part No. BTA312X-600D BTA312X-600E BTA312X-800E
Description 12 A Three-quadrant triacs high commutation

File Size 80.11K  /  12 Page

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    CM800E2C-66H

Mitsubishi Electric Semiconductor
Part No. CM800E2C-66H
Description 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

File Size 47.58K  /  4 Page

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    CM800E6C-66H

Mitsubishi Electric Semiconductor
Part No. CM800E6C-66H
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 65.23K  /  7 Page

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