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  bipolar ldmos Datasheet PDF File

For bipolar ldmos Found Datasheets File :: 67    Search Time::6.094ms    
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    STA-5063Z STA5063Z STA5063ZPCK-EVB1 STA5063ZPCK-EVB2 STA5063ZSQ STA5063ZSR STA-5063-Z

RF Micro Devices
Part No. STA-5063Z STA5063Z STA5063ZPCK-EVB1 STA5063ZPCK-EVB2 STA5063ZSQ STA5063ZSR STA-5063-Z
OCR Text ...lizes ingap gaas heterojunction bipolar transist or (hbt) amplifier housed in a low-cost surface- mountable plastic package. this product is specifically designed as a driver amplifier for wlan 802.11a and 5.8ghz ism band and 3.3ghz to 3.8g...
Description 3.3GHz to 6.2GHz GENERAL PURPOSE 3.3V 15dBm AMPLIFIER

File Size 583.33K  /  10 Page

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    RF9812

RF Micro Devices
Part No. RF9812
OCR Text ...gallium arsenide heterojunction bipolar transistor (gaas hbt) process, which is designed to operate either in saturated mode for gmsk or linear mode for edge 8psk and td-scdma sig- naling. the highly integrated edge+td-scdm a transmit modu...
Description TD-SCDMA Compliant

File Size 181.42K  /  2 Page

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    AN1294

STMicroelectronics
Part No. AN1294
OCR Text ...ut, up until now, the available bipolar technology did not allow for such types of package. the main advantages of this new rf plastic pac...ldmos products recently introduced by stmicroelectronics. www.st.com contents a...
Description During the last years

File Size 1,006.33K  /  20 Page

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    SZM-2066Z SZM2066Z SZM2066ZPCK-EVB2 SZM2066ZPCK-EVB3 SZM2066ZSQ SZM2066ZSR

RF Micro Devices
Part No. SZM-2066Z SZM2066Z SZM2066ZPCK-EVB2 SZM2066ZPCK-EVB3 SZM2066ZSQ SZM2066ZSR
OCR Text ...nearity class ab heterojunction bipolar transistor (hbt) amplifier housed in a low-cost su rface-mountable plastic q-flexn multi-chip module package. this hbt amplifier is ma de with ingap on gaas device technology and fabricated with mocvd...
Description 2.4GHz to 2.7GHz 2W POWER AMPLIFIER

File Size 1,062.95K  /  18 Page

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    SZM-5066Z SZM5066ZPCK-410

RF Micro Devices
Part No. SZM-5066Z SZM5066ZPCK-410
OCR Text ...nearity class ab heterojunction bipolar transistor (hbt) amplifier housed in a low-cost, su rface-mountable, plastic qfn multi-chip module package. the szm-5066z is made with ingap-on-gaas device technology and fabricated with mocvd for an ...
Description 5.0V, 5GHz HIGH POWER LINEAR POWER AMPLIFIER

File Size 1,132.53K  /  14 Page

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    SBA5086ZSR

RF Micro Devices
Part No. SBA5086ZSR
OCR Text ...mance ingap/gaas heterojunction bipolar tran- sistor mmic amplifier. a darlington configuration designed with ingap process tech- nology provides broadband performance up to 5ghz with excellent thermal performance. the heterojunction incre...
Description DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER

File Size 549.30K  /  6 Page

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    SXA389BZPCK1 SXA389BZPCK2 SXA389BZSR SXA389BZSQ

RF Micro Devices
Part No. SXA389BZPCK1 SXA389BZPCK2 SXA389BZSR SXA389BZSQ
OCR Text ... efficiency gaas heterojunction bipolar transistor (hbt) mmic housed in low-cost surface mountable plas- tic package. these hbt mmics are fa bricated using molecular beam epi- taxial growth technology which produces reliable and consistent...
Description 400MHz to 2500MHz ?W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS
   400MHz to 2500MHz ?W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS

File Size 678.74K  /  10 Page

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    RF5623HH50PCBA-410 RF5623HL50PCBA-410

RF Micro Devices
Part No. RF5623HH50PCBA-410 RF5623HL50PCBA-410
OCR Text ...n advanced ingap heterojunction bipolar transi stor (hbt) process, and has been designed for use as the final rf amplifier in 802.16e transmitters. the device is provided in a 3mmx3mmx0.45mm, 16-pin, leadless chip carrier with a backside gr...
Description SINGLE 5.0V, 3.3 TO 3.8 GHZ LINEAR POWER AMPLIFIER

File Size 3,672.80K  /  18 Page

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For bipolar ldmos Found Datasheets File :: 67    Search Time::6.094ms    
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