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意法半导
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| Part No. |
M39432
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| OCR Text |
...g temperature C40 to 85 c t bias temperature under bias C50 to 125 c t stg storage temperature C65 to 150 c v io (2) input or out...erase. block erasure may be suspended, while data is read from other blocks of the flash array (or e... |
| Description |
Single Chip 4Mbit Flash and 256Kbit Parallel EEPROM Memory(单片4Mb闪速和256Kb并行EEPROM)
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| File Size |
251.65K /
30 Page |
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ST Microelectronics
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| Part No. |
M29F400BT M29F400BB
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| OCR Text |
... range option 3) 40 to 125 c t bias temperature under bias 50 to 125 c t stg storage temperature 65 to 150 c v io (2) input or output vol...erase operations on all blocks will be possible. the transition from v ih to v id must be slower tha... |
| Description |
4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Single Supply Flash Memory
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| File Size |
149.25K /
22 Page |
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意法半导
STMicroelectronics N.V.
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| Part No. |
29W040 M29W040 M29W040-120K5TR M29W040-100K5TR M29W040-150K5TR M29W040-200K5TR M29W040-120NZ1R M29W040-200N6R M29W040-200K1TR M29W040-120NZ6R M29W040-100NZ6TR M29W040-120NZ6TR M29W040-150NZ6R M29W040-200NZ6R M29W040-100NZ6R M29W040-100NZ5TR M29W040-200NZ5TR M29W040-150NZ5TR M29W040-120NZ1TR M29W040-100NZ1TR -M29W040-200K6TR -M29W040-100N5TR -M29W040-100NZ6R -M29W040-100NZ1R -M29W040-100NZ6TR -M29W040-100NZ5R -M29W040-100K5R -M29W040-100NZ5TR -M29W040-150K1TR -M29W040-120N5TR -M29W040-150N6TR -M29W040-120NZ1TR -M29W040-120K5TR M29W040-150K1R -M29W040-200NZ6R -M29W040-120K1R
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| OCR Text |
...g temperature (3) 40 to 85 c t bias temperature under bias 50 to 125 c t stg storage temperature 65 to 150 c v io (2) input or output vol...erase. block erasure may be suspended, while data is read from other blocks of the memory, and then ... |
| Description |
4 Mbit 512Kb x8 / Uniform Block Low Voltage Single Supply Flash Memory
Excalibur Low-Noise High-Speed Precision Operational Amplifier 8-SOIC
Dual Low-Noise High-Speed Precision Operational Amplifier 8-SOIC
High Speed High Drive Precision Operational Amplifier 8-CDIP -55 to 125
Excalibur Low-Noise High-Speed Precision Dual Operational Amplifier 8-SOIC
High Speed High Drive Precision Dual Operational Amplifier 8-CDIP -55 to 125
; Capacitance:180pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V; Package/Case:1210; Series:SQ; Dielectric Material:Ceramic; Leaded Process Compatible:Yes; Mounting Type:PCB Surface Mount
High Speed High Drive Precision Dual Operational Amplifier 20-LCCC -55 to 125 4兆位512KB的8，统一座低电压单电源闪
CAP RF 2.0PF 250V 0603 SMD 4兆位512KB的8，统一座低电压单电源闪
4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory 4兆位512KB的8，统一座低电压单电源闪
CAP RF 27PF 250V 0603 SMD 4兆位512KB的8，统一座低电压单电源闪
CAP RF 1.8PF 250V 0603 SMD 4兆位512KB的8，统一座低电压单电源闪
CAP RF 24PF 250V 0603 SMD 4兆位512KB的8，统一座低电压单电源闪
CAP RF 22PF 250V 0603 SMD 4兆位512KB的8，统一座低电压单电源闪
High Speed High Drive Precision Dual Operational Amplifier 8-SOIC
CAP RF 1.0PF 250V 0603 SMD
Excalibur Low-Noise High-Speed Precision Operational Amplifier 8-PDIP 0 to 70
Dual Low-Noise High-Speed Precision Operational Amplifier 8-PDIP
512K X 8 FLASH 3V PROM, 150 ns, PQCC32
512K X 8 FLASH 3V PROM, 200 ns, PDSO32
512K X 8 FLASH 3V PROM, 120 ns, PQCC32
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| File Size |
209.53K /
31 Page |
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it Online |
Download Datasheet |
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意法半导
STMicroelectronics N.V.
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| Part No. |
M36DR432-ZAT M36DR432A100ZA6T M36DR432A100ZA6C M36DR432A120ZA6C M36DR432A120ZA6T
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| OCR Text |
...g temperature (3) C40 to 85 c t bias temperature under bias C40 to 125 c t stg storage temperature C55 to 150 c v io (2) input or output vol...erase timer bit dq3. outputs are valid when flash chip enable (ef ) and output enable (gf )or sram c... |
| Description |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product 32兆位Mb x16插槽，双行，页闪存和4兆位256K x16的SRAM，多个存储产
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| File Size |
335.18K /
46 Page |
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STMicroelectronics N.V.
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| Part No. |
M29W400BB90N6T M29W400BB90M1T M29W400BB55N1T
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| OCR Text |
...e range option 6) 40 to 85 c t bias temperature under bias 50 to 125 c t stg storage temperature 65 to 150 c v io (2) input or output vol...erase operations on all blocks will be possible. the transition from v ih to v id must be slower tha... |
| Description |
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory 4兆位512KB的x856Kb的x16插槽，引导块低压单电源闪
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| File Size |
148.54K /
22 Page |
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it Online |
Download Datasheet |
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Price and Availability
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