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Cypress Semiconductor Corp.
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| Part No. |
CY7C1330 7C1330
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| OCR Text |
.../O pins. When LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are three-stated, and act as input data pins. OE is masked during the first clock of a read cycle when going from a deselected to a selected state. Advance In... |
| Description |
64K x 32 Synchronous-Pipelined Cache RAM(64K x 32 同步流水线式高速缓冲存储器 RAM)
From old datasheet system
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| File Size |
316.54K /
16 Page |
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it Online |
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Cypress Semiconductor Corp.
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| Part No. |
CY7C1333 7C1333 CY7C1333-66AC CY7C1333-50AC
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| OCR Text |
...OW, the I/O pins are allowed to behave as outputs. When deasserted HIGH, I/O pins are three-stated, and act as input data pins. OE is masked during the data portion of a write sequence, during the first clock when emerging from a deselected... |
| Description |
64Kx32 Flow-Thru SRAM with NoBL Architecture(B>NoBL结构4Kx32流通式 SRAM)
64Kx32 Flow-Thru SRAM with NoBL⑩ Architecture
From old datasheet system
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| File Size |
179.79K /
12 Page |
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it Online |
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Cypress Semiconductor Corp.
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| Part No. |
CY7C1334 7C1334
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| OCR Text |
...OW, the I/O pins are allowed to behave as outputs. When deasserted HIGH, I/O pins are three-stated, and act as input data pins. OE is masked during the data portion of a write sequence, during the first clock when emerging from a deselected... |
| Description |
64Kx32 Flow-Thru SRAM with NoBL Architecture(B>NoBL结构4Kx32流通式 SRAM)
From old datasheet system
64Kx32 Pipelined SRAM with NoBL Architecture
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| File Size |
183.37K /
11 Page |
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it Online |
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Cypress Semiconductor Corp.
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| Part No. |
CY7C1335 7C1335 CY7C1335-100AC
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| OCR Text |
.../O pins. When LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are three-stated, and act as input data pins. OE is masked during the first clock of a read cycle when emerging from a deselected state. Advance Input signal,... |
| Description |
32K X 32 CACHE SRAM, 5 ns, PQFP100
32K x 32 Synchronous-Pipelined Cache RAM(32K x 32 同步流水线式高速缓冲存储器 RAM) 32K的32同步流水线缓存内存（32K的32同步流水线式高速缓冲存储器的RAM
From old datasheet system
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| File Size |
277.35K /
15 Page |
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it Online |
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Cypress Semiconductor Corp.
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| Part No. |
CY7C1337 7C1337
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| OCR Text |
.../O pins. When LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are three-stated, and act as input data pins. OE is masked during the first clock of a read cycle when going from a deselected to a selected state. Advance In... |
| Description |
32K x 32 Synchronous-Pipelined Cache RAM(32K x 32 同步流水线式高速缓冲存储器 RAM)
From old datasheet system
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| File Size |
320.45K /
17 Page |
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it Online |
Download Datasheet |
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Cypress
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| Part No. |
CY7C1338 7C1338
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| OCR Text |
.../O pins. When LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are three-stated, and act as input data pins. Snooze Input. Active HIGH asynchronous. When HIGH, the device enters a low-power standby mode in which all other... |
| Description |
128K x 32 Synchronous-Flow-Through 3.3V Cache RAM
From old datasheet system
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| File Size |
271.46K /
16 Page |
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it Online |
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Cypress Semiconductor Corp.
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| Part No. |
CY7C1339 7C1339
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| OCR Text |
.../O pins. When LOW, the I/O pins behave as outputs. When deserted HIGH, I/O pins are three-stated, and act as input data pins. OE is masked during the first clock of a read cycle when emerging from a deselected state. Advance Input signal, s... |
| Description |
128K x 32 Synchronous-Pipelined Cache RAM(128K x 32 同步流水线式高速缓冲存储器 RAM)
From old datasheet system
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| File Size |
277.19K /
15 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
AN254
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| OCR Text |
... flashers and igni- tion sparks behave as high frequency noise gener- ators with an equivalent series resistance of 50 to 500 w . the energy associated with these transients is much lower than load dump or field decay tran- sients but the n... |
| Description |
LOW/DROP VOLTAGE REGULATORS FOR AUTOMOTIVE ELECTRONICS
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| File Size |
103.11K /
9 Page |
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it Online |
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ATMEL CORP
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| Part No. |
AT49SN6416T AT49SN3208T AT49SN6416T-90CJ
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| OCR Text |
...th tied to gnd, the device will behave like a standard asynchronous flash memory. in the page mode, the avd signal can be tied to gnd or can be pulsed low to latch the page address. in both cases the clk can be tied to gnd. the at49sn3208(t... |
| Description |
AT49SN6416(T)/3208(T) Advance Information [Updated 3/02. 38 Pages] 64M bit and 32M. 1.8-Volt Burst and Page Mode Flash Memory
4M X 16 FLASH 1.8V PROM, 90 ns, CBGA55
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| File Size |
296.38K /
38 Page |
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it Online |
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