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EM Microelectronic
Bourns, Inc.
SEMIKRON
Samsung Semiconductor Co., Ltd.
California Eastern Laboratories, Inc.
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| Part No. |
BCX76-40 BF413 BC140-25 BC537-16 MPS6573 BC328-10 BC728-10 BC728-25 BC169B BC160-25 BC728-40 2N3901 BC527-10 BC537-6 BC318A 2N3212 BC738-40 BC738-25 BC738-16 PN3962 2N5219 BC212KA BC527-16 BC527-6 BC141-25 CS9014 BC537-25 BC537-10 BC317A BC183LA BFY39-3 BFY39-1 BFY39-2 PN1613 PN1893 2N2868 BC486A BC182KA BC183KA BC213KA BCX75-16 2N3304 BC319B BC486B BCY78-10
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| Description |
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 800MA I(C) | TO-92
TRANSISTOR | BJT | NPN | 170V V(BR)CEO | 50MA I(C) | TO-92
Stratix II GX FPGA 130K FPGA-1508
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-92
TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 200MA I(C) | TO-92
IC MAX 7000 CPLD 64 44-TQFP
IC FLEX 10KA FPGA
Cyclone II FPGA 50K FBGA-484
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | TO-92
2GB DDR2 SDRAM VLP DIMM
MAX 7000 CPLD 128 MC 100-TQFP
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-37
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | TO-92
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-92
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-18
Cyclone FPGA 6K PQFP-240
CYCLONE III FPGA 119K 484FBGA
MAX 7000 CPLD 64 MC 100-TQFP
MAX 3000A CPLD 32 MC 44-TQFP
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
TRANSISTOR | BJT | NPN | 1A I(C) | TO-105
Dual Matched Amplifiers with Digitally Programmable Gain in MSOP; Package: MSOP; No of Pins: 10; Temperature Range: 0°C to 70°C
IC MAX 7000 CPLD 128 144-TQFP
MAX II CPLD 1270 LE 144-TQFP
Programmable Logic IC; Logic Type:Programmable; No. of Macrocells:220; Package/Case:484-FBGA; Leaded Process Compatible:No; Number of Circuits:1728; Peak Reflow Compatible (260 C):No RoHS Compliant: No
Leaded Cartridge Fuse; Current Rating:12A; Voltage Rating:32V; Fuse Terminals:Axial Lead; Fuse Type:Time Delay; Voltage Rating:32V; Body Material:Glass; Diameter:6.985mm; Leaded Process Compatible:Yes; Length:32.385mm; Series:315P RoHS Compliant: Yes
TRANSISTOR | BJT | PNP | 6V V(BR)CEO | TO-18 晶体管|晶体管|进步党| 6V的五（巴西）总裁|8
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 100MA I(C) | TO-92 晶体管|晶体管|叩| 18V的五（巴西）总裁| 100mA的一（c）|2
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | TO-92 晶体管|晶体管|进步党| 25V的五（巴西）总裁|2
MAX 7000 CPLD 512 MC 208-PQFP 晶体管|晶体管|叩| 20V的五（巴西）总裁| 500mA的一（c）|2
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1A I(C) | TO-92 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 1A条一（c）|2
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | TO-18
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| File Size |
1,457.60K /
36 Page |
 View
it Online |
Download Datasheet
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NXP Semiconductors N.V.
EPCOS AG
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| Part No. |
BZV55-BC10 BZV55-BC3V3 BZV55-BC4V7 BZV55-BC6V2 BZV55-BC6V8 BZV55-BC11 BZV55-BC12 BZV55-BC13 BZV55-BC3V0 BZV55-BC3V6 BZV55-BC3V9 BZV55-BC5V6 BZV55-BC7V5 BZV55-BC8V2 BZV55-BC2V4 BZV55-BC2V7 BZV55-BC4V3 BZV55-BC5V1 BZV55-BC9V1 BZV55-B4V3 BZV55-B62 BZV55-B47 BZV55-C9V1 BZV55-B75 BZV55-C8V2 BZV55-B6V2 BZV55-B51 BZV55-C7V5 BZV55-B7V5 BZV55-B8V2 BZV55-B43 BZV55-C62 BZV55-C75 BZV55-B5V6 BZV55-B3V6 BZV55-B27135 BZV55-B3V0 BZV55-B6V8 BZV55-B4V7 BZV55-B56 BZV55-B5V1 BZV55-C6V8 BZV55-B10 BZV55-B39 BZV55-C3V0 BZV55-C15/T3 NXPSEMICONDUCTORS-BZV55-C8V2T/R BZV55-B56135 BZV55-C2V7 BZV55-C2V4 BZV55-B33 BZV55-C16 NXPSEMICONDUCTORS-BZV55-C2V4115 NXPSEMICONDUCTORS-BZV55-C20135 BZV55-C5V6.115
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| Description |
27 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
Voltage regulator diodes 稳压二极
14.7 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
56 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
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| File Size |
94.91K /
13 Page |
View
it Online |
Download Datasheet |
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