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				International Rectifier, Corp.
Part No.	IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text	... and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die size...dd IRF4905S/L 2500 VDS L E a S , S in g le P u ls e a va la n c h e E n e rg y (m J) TO P ...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74a) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74a条） Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74a) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
File Size	159.46K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305L IRF5305S
OCR Text	... and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die size...dd 5 IRF5305S/L 700 VDS L E a S , S ingle P ulse a valanche E nergy (m J) TO P 600 ...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31a) Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31a)
File Size	167.31K / 10 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMicroelectronics
Part No.	IRF530FI IRF530 3003
OCR Text	...DS(on) < 0.16 < 0.16 ID 16 a 11 a TYPICaL RDS(on) = 0.12 aVaLaNCHE RUGGED TECHNOLOGY 100% aVaLaNCHE TESTED REPETITIVE aVaLaNCHE DaT...dd = 50 V) Max Value 16 100 Unit a mJ ELECTRICaL CHaRaCTERISTICS (Tcase = 25 oC unless otherwise ...
Description	From old datasheet system N - CHaNNEL ENHaNCEMENT MODE POWER MOS TRaNSISTOR
File Size	46.69K / 6 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	IRF530FP 5758
OCR Text	... V R DS(on) < 0.16 ID 10 a s s TYPICaL RDS(on) = 0.12 100% aVaLaNCHE TESTED REPETITIVE aVaLaNCHE DaTa aT 100oC LOW GaTE CHaRGE...dd = 50 V ID R G = 4.7 V GS = 10 V V dd = 80 V I D = 16 a =8a Min. Typ. 12 20 32 9 13 Max. 16 28 44...
Description	N - CHaNNEL ENHaNCEMENT MODE POWER MOS TRaNSISTOR From old datasheet system
File Size	76.48K / 5 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF530L IRF530NS IRF530NL
OCR Text	... and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die size...dd 10 V 350 TO P 300 B O TTO M 250 ID 3.7 a 6.4a 9 .0 a IaS tp 0.01 200 Fig...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17a) HEXFET Power MOSFET Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17a)
File Size	174.65K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7106 IRF7106TR
OCR Text	...ely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced therm...dd V(BR)DSS, T J 150C P-Channel ISD -2.3a, di/dt 50a/s, V dd V(BR)DSS, T J 150C Pulse width 3...
Description	20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss= -20V)
File Size	157.44K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840aL IRF840aS IRF840aSTRR
OCR Text	...00 (1.6mm from case ) Units a W W/C V V/ns C Typical SMPS Topologies l l l Two Transistor Forward Haft Bridge Full Bridge throug...dd a 600 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 400 200...
Description	TRaNSISTOR \| MOSFET \| N-CHaNNEL \| 500V V(BR)DSS \| 8a I(D) \| TO-263aB 晶体管\| MOSFET的\| N沟道\| 500V五（巴西）直\| 8a条（丁）\|63aB Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0a) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）最大值\u003d 0.85ohm，身份证\u003d 8.0a Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0a)
File Size	125.49K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF840a
OCR Text	... ) 10 lbfin (1.1Nm) Units a W W/C V V/ns C Typical SMPS Topologies: l l l Two Transistor Forward Haft Bridge Full Bridge 1 7/7...dd 10V 4.0 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 2.0 ...
Description	Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0a) Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0a) Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0a)
File Size	87.92K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840LCL IRF840LCS
OCR Text	...ed efficiency and achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the ne...dd 10V Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit VDS 90% F...
Description	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0a) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0a Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0a)
File Size	169.91K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9230 JaNTXV2N6806 JaNTX2N6806
OCR Text	a aLaNCHE aND dv/dt RaTED V JaNTX2N6806 HEXFET TRaNSISTORS JaNTXV2N6806 THRU-HOLE (TO-204aa/aE) [REF:MIL-PRF-19500/562] 200V, P-CHaNNEL Pr...dd 5 IRF9230 VDS L RG D .U .T Ia S VD D a D R IV E R -20V 10 10 tp 0....
Description	TRaNSISTORS P-CHaNNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5a) CaP CER 250VaC 82PF 5% SL 1808 6.5 a, 200 V, 0.92 ohm, P-CHaNNEL, Si, POWER, MOSFET, TO-204aa
File Size	148.64K / 7 Page	View it Online	Download Datasheet

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