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California Eastern Laboratories, Inc.
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| Part No. |
NE5520279a-T1-a
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| OCR Text |
...e lateral mosfet) and housed in a surface mount package. ? digital cellular phones: 3.2 v dcs1800 handsets ? 0.7-2.5 ghz fixed wi...250 0 i ds (ma) a dd f = 1.8 ghz v ds = 3.2 v i dq = 300 ma p out i ds d 1 2 3 4 0 35 30 25 20 ... |
| Description |
3.2 V, 2 W, L&S BaND MEDIUM POWER SILICON LD-MOSFET 3.2五,2瓦报
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| File Size |
280.86K /
8 Page |
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it Online |
Download Datasheet
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California Eastern Laboratories Duracell
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| Part No. |
NE687M33-T3-a
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| OCR Text |
...s. absolute maximum ratings (t a =+25oc) parameter symbol ratings unit collector to base voltage v cbo 5.0 v collector to emitter voltage ...250 a 300 a 350 a 400 a 450 a 150 a 100 a 0 25 50 75 100 125 150 1 2 3 4... |
| Description |
NECs NPN SILICON TRaNSISTOR
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| File Size |
307.59K /
6 Page |
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it Online |
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CEL[California Eastern Labs]
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| Part No. |
NE552R479a-T1a-a NE552R479a
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| OCR Text |
....
Gate
Drain
1.2 MaX.
a
0.40.15 5.7 MaX.
0.20.1
0.8 MaX.
3.60.2
DESCRIPTION
NEC's NE552R479a is an N-Channel silicon p...250
25
10
Ids
250
25
5
0 5 10 15 20 25
0
0
5 0 1 2 3 4
0
0
Inpu... |
| Description |
NECs 3.0 V, 0.25 W L&S-BaND MEDIUM POWER SILICON LD-MOSFET
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| File Size |
392.01K /
9 Page |
View
it Online |
Download Datasheet
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Price and Availability
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