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Micross Components
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| Part No. |
ICE60N160B
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| OCR Text |
...4 0.16 ? v gs = 10v, i d = 11.9a, t j = 25c - 0.42 - v gs = 10v, i d = 11.9, t j = 150c r gs gate resistance - 4 - ? f = 1 mhz, open drain
ice60n160b dynamic characteristics c iss input capacitance - 2750 - pf v gs = 0v, v ds = 2... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
762.00K /
4 Page |
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IPS
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| Part No. |
FTA02N65B
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| OCR Text |
... -- 6.5 8.0 ? v gs =10v, i d =0.9a (note *4) v gs(th) gate threshold voltage, figure 12. 2.0 -- 4.0 v v ds = v gs , i d = 250 a gfs forw...650v, v gs =0v -- -- 250 v ds =520v, v gs =0v t j =125 o c i gss gate-to-source forward leakage -- ... |
| Description |
N-Channel MOSFET
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| File Size |
273.10K /
9 Page |
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it Online |
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TY Semiconductor Co., Ltd
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| Part No. |
CJP08N65
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| OCR Text |
...e g fs v ds =50v, i d =3.9a 8.5 s dynamic characteristics (note 3) input capacitance c iss 1255 output capacitance c oss 135 reverse transfer capacitance c rss v ds =25v,v gs =0v,f =1mhz ... |
| Description |
TO-220-3L Plastic-Encapsulate MOSFETS
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| File Size |
459.87K /
2 Page |
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it Online |
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