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				Cypress Semiconductor
Part No.	CY7C1550V18-300BZC CY7C1550V18-300BZI CY7C1550V18-300BZXC CY7C1550V18-300BZXI CY7C1550V18-333BZC CY7C1550V18-333BZI CY7C1550V18-333BZXC CY7C1550V18-333BZXI CY7C1550V18-375BZC CY7C1550V18-375BZI CY7C1550V18-375BZXC CY7C1557V18 CY7C1557V18-300BZC
OCR Text	...location is associated with two 8-bit words (CY7C1546V18), 9-bit words (CY7C1557V18), 18-bit words (CY7C1548V18), or 36-bit words (CY7C1550V...8M x 8, 8M x 9, 4M x 18, 2M x 36) 300 MHz to 375 MHz clock for high bandwidth 2-Word burst for reduc...
Description	72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
File Size	954.75K / 27 Page	View it Online	Download Datasheet

				Samsung Electronic
Part No.	KM29U64000T KM29U64000IT
OCR Text	8 bit nand flash memory revision history the attached datasheets are prepared and approved by samsung electronics. samsung electronics co....8m x 8 bit nand flash memory the km29u64000 is a 8m(8,388,608)x8bit nand flash mem- ory with a spare...
Description	8M x 8 Bit NAND Flash Memory
File Size	478.12K / 26 Page	View it Online	Download Datasheet

				AMI[AMI SEMICONDUCTOR]
Part No.	X2P880 X2P1040 X2P1200 X2P1360 X2P360 X2P560 X2P640 X2P720 X2P846
OCR Text	...673 2889 3414 1445 X2P1200 1200 8 8 189 3484 4085 4532 2042 X2P1360 1360 8 8 264 4866 4868 6116 2434 (1) Usable 2RW RAM bits (2) Usable 2-NAND equivalent logic gates AMI Semiconductor www.amis.com Devices sold by AMIS are covered by th...
Description	0.15レm Structured ASIC
File Size	145.55K / 2 Page	View it Online	Download Datasheet

				ETC[ETC]
Part No.	VP-1000AF VP-1000A
OCR Text	...ROM Stand-alone operation 32K x 8 direct memory addressing, expandable Single 5V DC supply voltage n n n n n n VP-1000A Digital Voice Pro...8M EPROM 3. Multiple-Message Playback, Sequential Control The 8M EPROM is divided into 32 equal s...
Description	Digital Voice Processor
File Size	356.07K / 6 Page	View it Online	Download Datasheet

				Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp]
Part No.	V82658J04S
OCR Text	... Features 184 Pin Unbuffered 8,388,608 x 64 bit Organization DDR SDRAM Modules Utilizes High Performance 8M x 16 DDR SDRAM in TSOPII-66 Packages Single +2.5V ( 0.2V) Power Supply Programmable CAS Latency, Burst Length, and Wrap Sequen...
Description	2.5 VOLT 8M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE
File Size	166.97K / 13 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung semiconductor
Part No.	K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4S281632E-TC75 K4S281632E-TL60 K4S281632E-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 K4S280432E-TC75 K4S280432E-TL75
OCR Text	...& 3) -. Burst length (1, 2, 4 & 8 ) -. Burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge of the syste...8M x 4 / 4M x 8 / 2M x 16 Sense AMP 8M x 4 / 4M x 8 / 2M x 16 8M x 4 / 4M x 8 / 2M x 16 8M x 4 / 4M ...
Description	128Mb F-die SDRAM Specification 128Mb E-die SDRAM Specification
File Size	142.11K / 14 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832F-TC75 K4S280832F-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 TL431CDT K4S280432F-TCL75 K4S280832F-TCL75 K4S280432F-TC75 K4S281632F-TCL60 K4S281632F-TCL75 K4S280432F-TL75
OCR Text	... & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge o...8M x 16 Max Freq. 133MHz 133MHz 166MHz Interface LVTTL LVTTL LVTTL Package 54pin TSOP 54pin TSOP 54p...
Description	128Mb F-die SDRAM Specification 128Mb的的F - SDRAM内存芯片规格
File Size	143.50K / 14 Page	View it Online	Download Datasheet

				Mosel Vitelic, Corp. MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp
Part No.	V43658Y04VATG-75
OCR Text	...able Burst Lengths: 1, 2, 4, or 8 s Auto Precharge and Precharge all Banks by A10 s Data Mask Function by DQM s Mode Register Set Programmin...8M x 16 The V43658Y04VATG-75 memory module is organized 8,388,608 x 64 bits in a 144 pin SODIMM. ...
Description	64MB 168-PIN 133 MHZ SDRAM UNBUFFERED SODIMM 3.3 VOLT, 8M x 64
File Size	72.48K / 11 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S560832A K4S560832A-TC_L1H K4S560832A-TC_L1L K4S560832A-TC_L75 K4S560832A-TC_L80 K4S560832A-TC/L80 K4S560832A-TC/L1H K4S560832A-TC/L1L K4S560832A-TC/L75
OCR Text	... & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge o...8M x 8 Sense AMP 8M x 8 8m x 8 8m x 8 Refresh Counter Output Buffer Row Decoder Row Buffer ...
Description	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL IC,SDRAM,4X8MX8,CMOS,TSOP,54PIN,PLASTIC
File Size	125.57K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S560832B K4S560832B-TC_L1H K4S560832B-TC_L1L K4S560832B-TC_L75 K4S560832B-TC/L75 K4S560832B-TC/L1L K4S560832B-TC/L1H
OCR Text	... & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge o...8M x 8 Sense AMP 8M x 8 8m x 8 8m x 8 Refresh Counter Output Buffer Row Decoder Row Buffer ...
Description	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
File Size	130.10K / 11 Page	View it Online	Download Datasheet

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