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Murata
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| Part No. |
PRF18BF471RB5RB PRF18BG471QB5RB
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| OCR Text |
...istor resistor op. amp. ups 1 2 7 1 parts posistorr transistor resistor op. amp. ups 1 1 2 0 total 11 total 4 ptc1 r1 r4 v+in vCin comp out ...ohm) prg18bb471mb1rb 24 7 10 21 25 60 470 20% prg18bb221mb1rb 24 10 14 29 35 130 220 20% prg18bb101m... |
| Description |
Chip POSISTOR
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| File Size |
701.26K /
12 Page |
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it Online |
Download Datasheet
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Murata
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| Part No. |
PRF18BF471RB5RB PRF18BG471QB5RB
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| OCR Text |
... prf18bg471qb5rb 65 5 c 80 7 c 32 470 50% -20 to 90 prf18bf471qb5rb 75 5 c 90 7 c 32 470 50% -20 to 100 prf18be471qb5rb 85 ...ohm) ( c) maximum voltage (v) resistance (at 25 c) (ohm) operating temperature range ( c) prf18bg... |
| Description |
PTC - NTC for Surface Mounting Application
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| File Size |
968.56K /
11 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STF8234
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| OCR Text |
... t a = -25 c -50 0.6 0.9 0.8 0.7 150 100 50 0 t ch - channel temperature - c v gs(off) - gate to source cut-off voltage - v gatebto soure cut-off voltage vs. channel temperature i d = 1.0ma 0.01 0.01 0.1 100 10 1 100 10 1 0.1 i d - dr... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
93.41K /
6 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STF8233
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| OCR Text |
...i d r ds(on) (m ) max 20v 11a 7.5 @ vgs=4.0v 7.2 @ vgs=4.5v features super high dense cell design for low r ds(on) . rugged and re...ohm v gs =4.5v , i d =5.5a r ds(on) drain-source on-state resistance i dss ua gate threshold voltag... |
| Description |
Super high dense cell design for low RDS(ON).
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
97.39K /
7 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics
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| Part No. |
STU630S
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| OCR Text |
....5 2 2.5 3 v gs =4v 35 28 21 14 7 0 0 0.9 5.4 4.5 3.6 2.7 1.8 25 c tj=125 c -55 c 18 15 12 9 6 3 0 1 16 32 48 64 80 v gs =10v v gs =4.5v 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v ds =v gs i d =250ua 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 ... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
115.05K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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