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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
SSM6K08FU
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| OCR Text |
... = 0.8 A, VGS = 0~2.5 V, RG = 4.7 W
Note2: Pulse test
Switching Time Test Circuit
(a) Test Circuit
OUT IN 0V RG 10 ms VDD = 10 V RG = 4.7 W D.U. < 1% = VIN: tr, tf < 5 ns Common Source Ta = 25C 10%
(b) VIN
2.5 V 90%
2.5 V 0
... |
| Description |
Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category High Speed Switching Applications
CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category
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| File Size |
148.36K /
6 Page |
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SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
SNA-100S
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| OCR Text |
...950 MHz 0.1-10 GHz
M in.
10.7
T yp.
12.5 12.2 12.0 12.5 10.3 +/- 0.5 10.5 11.0 11.5 24.0 24.0 5 13 16 3.6 40 -0.0015 280
M ax.
13.7
Gp
Small Signal Power Gain [2]
8.8
11.8
Gain Ripple GF BW 3dB 3dB Bandwidth P 1dB... |
| Description |
DC-10 GHz, Cascadable GaAs HBT MMIC Amplifier
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| File Size |
165.52K /
3 Page |
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it Online |
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http://
ETC[ETC]
SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
SNA-200S
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| OCR Text |
... MHz 6000 MHz 1950 MHz 1950 0.1-7.0 GHz
Min.
13.5 12.3
Typ.
15.5 15.0 15.0 13.8 +/- 1.0 7 12.0 12.2 25.0 24.5 5.5 12.9 20 3.6 40 -0.0018 270
Max.
16.5 15.3
GF Gain Ripple BW3dB 3dB Bandwidth P1dB OIP 3 NF RL ISOL VD ID dG/dT ... |
| Description |
DC-6.5 GHz, Cascadable GaAs HBT MMIC Amplifier
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| File Size |
164.53K /
3 Page |
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it Online |
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STANFORD[Stanford Microdevices]
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| Part No. |
SNA-276-TR3 SNA-276 SNA-276-TR1 SNA-276-TR2
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| OCR Text |
...1 .0 6 .5 1 4 .0 5 .5 1 .5 :1 2 7 .0 100 20 3 .5 4 .0 -0 .0 0 1 8 -4 .0 4 .5 6 .0 M ax.
G
P
G
F
G a in F la tn e s s 3 d B B a n d w id th O u tp u t P o w e r a t 1 d B C o m p re s s io n N o is e F ig u r e In p u t/O u tp... |
| Description |
DC-6.5 GHz, Cascadable GaAs MMIC Amplifier 直流6.5千兆赫，砷化镓MMIC放大器级
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| File Size |
80.92K /
3 Page |
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it Online |
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http://
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
SSF7N60A
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| OCR Text |
...5V f=1MHz See Fig 5 { { See Fig 7 VDS=5V, ID=250A
{|
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD Trr Qrr Charact...0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V
Fig 2. Transfer Characteristics
11 0
11 0
ID ... |
| Description |
N-CHANNEL POWER MOSFET
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| File Size |
252.02K /
8 Page |
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STANFORD[Stanford Microdevices]
http://
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| Part No. |
SNA-476-TR3 SNA-476 SNA-476-TR1 SNA-476-TR2
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| OCR Text |
...T e s t C o n d itio n s : Id = 7 0 m A , Z 0 = 5 0 O h m s S m a l l S i g n a l P o w e r G a in f = 0 .1 -2 .0 G H z f = 2 .0 -6 .0 G H z f = 6 .0 -8 .0 G H z f = 0 .1 -6 .0 G H z U n its dB dB dB dB GHz f = 2 .0 G H z f = 2 .0 G H z f =... |
| Description |
DC-8 GHz, Cascadable GaAs MMIC Amplifier DC - 8型频率，砷化镓MMIC放大器级
DC-8 GHz Cascadable GaAs MMIC Amplifier
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| File Size |
84.04K /
3 Page |
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it Online |
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STANFORD[Stanford Microdevices]
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| Part No. |
SNA-576-TR3 SNA-576 SNA-576-TR1 SNA-576-TR2
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| OCR Text |
...T e s t C o n d itio n s : Id = 7 0 m A , Z 0 = 5 0 O h m s S m a ll S ig n a l P o w e r G a in f = 0 .1 -1 .0 G H z f = 1 .0 -2 .0 G H z f = 2 .0 -3 .0 G H z f = 0 .1 -2 .0 G H z U n its dB dB dB dB GHz f = 2 .0 G H z f = 2 .0 G H z f = 0... |
| Description |
DC-3 GHz, Cascadable GaAs MMIC Amplifier 的DC - 3千兆赫，砷化镓MMIC放大器级
MOUNTING KITS
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| File Size |
87.99K /
3 Page |
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it Online |
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Price and Availability
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