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Infineon
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| Part No. |
SIDC10D120H6
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| OCR Text |
... tbd description: aql 0,65 for visual inspection according to failure catalog electrostatic discharge sensitive device according to mil - std 883 test - normen villach/prffeld published by infineon technologies ag... |
| Description |
Diodes - HV Chips - SIDC10D120H6, 1200V, 15A
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| File Size |
81.46K /
4 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APTM10UM01FA
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| OCR Text |
... 1080 185 270 600 175 3.3 3.6 3.65 3.85
Max
Unit nF
nC
ns
mJ mJ
Source - Drain diode ratings and characteristics
Symbol I...600A/s IS = - 550A VR = 66V diS/dt = 600A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 2.4 10.2
Max 86... |
| Description |
Single Switch MOSFET Power Module
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| File Size |
292.59K /
6 Page |
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it Online |
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Mitsubishi Electric Corporation
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| Part No. |
CM600HB-90H
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| OCR Text |
...40 15 29.5 48.8 124 0.25 20 10.65 10.35 5 38 6 - 7mounting holes 2nd-version hvigbt (high voltage insulated gate bipolar transistor) modu...600a, v ge = 15v v cc = 2250v, i c = 600a v ge1 = v ge2 = 15v r g = 15 ? resistive load switch... |
| Description |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
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| File Size |
49.34K /
4 Page |
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it Online |
Download Datasheet |
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Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
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| Part No. |
CM600DU-24F
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| OCR Text |
... Sinking
Millimeters 14.5 40.0 65.0 M8 6.5 Dia. 8.0
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N Inches 5.51...600A, VGE = 15V, Tj = 25C IC = 600A, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltag... |
| Description |
Dual IGBTMOD 600 Amperes/1200 Volts 600 A, 1200 V, N-CHANNEL IGBT
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| File Size |
62.55K /
4 Page |
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it Online |
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Price and Availability
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