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F455A SL8454 10A09 BFP62010 N4401 MBR2020 2A105J FC250R
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    Macronix International Co., Ltd.
Part No. 29F080-12
OCR Text 6, nov, 21, 2002 mx29f080 8m-bit [1024k x 8] cmos equal sector flash memory preliminary features ? 1,048,576 x 8 byte mode only ? single pow...30h sector erase suspend 1 xxxh b0h sector erase resume 1 xxxh 30h table 1. software command definit...
Description 8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY 800万位[1024K × 8]的CMOS平等部门闪存

File Size 679.78K  /  38 Page

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    SST
Part No. 39VF1601
OCR Text ...ll output dq 2 toggling and dq 6 at ?1?. while in erase-suspend mode, a word-program operation is allowed except for the sector or block s...30h) at any address in the last byte sequence. chip-erase operation the sst39vf160x/320x/640x provid...
Description Search --To SST39VF1601

File Size 443.33K  /  32 Page

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    Silicon Storage Technology
Part No. 39VF1681
OCR Text ...ll output dq 2 toggling and dq 6 at ?1?. while in erase-suspend mode, a byte-program operation is allowed except for the sector or block s...30h) at any address in the last byte sequence. datasheet.in preliminary specifications 16 mbit mu...
Description Search --To SST39VF1681

File Size 391.76K  /  29 Page

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    Silicon Storage Technology
Part No. 39VF3201
OCR Text ...ll output dq 2 toggling and dq 6 at ?1?. while in erase-suspend mode, a word-program operation is allowed except for the sector or block s...30h) at any address in the last byte sequence. chip-erase operation the sst39vf160x/320x/640x provid...
Description Search --To SST39VF3201

File Size 443.62K  /  32 Page

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    意法半导
STMicroelectronics N.V.
Part No. M39432-10VNC6T M39432-15VNC6T M39432-12WNC6T M39432-10WNC6T
OCR Text ...aximum) C deep power down mode: 6 m a (maximum), 200 na (typical) n standard flash memory package n 100,000 erase/write cycles (minimum) n 1...30h @ sector address 30h @ sector address 3 erase the whole of flash memory 10 aah @5555h 55h @2a...
Description CAP .47UF 275VAC EMI SUPPRESSN
DIODE ZENER SINGLE 500mW 18Vz 5mA-Izt 0.05 0.1uA-Ir 12.6 PowerDI-323 3K/REEL 单芯 Mbit闪存和EEPROM56千位并行
Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM 单芯 Mbit闪存和EEPROM56千位并行

File Size 225.35K  /  28 Page

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    TH50VSF2580AASB TH50VSF2581AASB

TOSHIBA[Toshiba Semiconductor]
Part No. TH50VSF2580AASB TH50VSF2581AASB
OCR Text ...1AASB can range from 2.7 V to 3.6 V. The TH50VSF2580/2581AASB can perform simultaneous read/write operations on its flash memory and is avai...30H AAH 2AAH 555H AAH B0H 30H 60H BPA (9) 55H 555H BK (3) ID (5) AAAH 55H 555H AAAH...
Description SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE

File Size 533.68K  /  50 Page

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    TH50VSF3582AASB TH50VSF3583AASB

TOSHIBA[Toshiba Semiconductor]
Part No. TH50VSF3582AASB TH50VSF3583AASB
OCR Text ...IOS = VCC (x16, x16) 1 2 3 4 5 6 7 8 9 10 Function mode control for flash memory Compatible with JEDEC-standard commands Flash memory fu...30H AAH 2AAH 555H AAH B0H 30H 60H BPA (9) 55H 555H BK (3) ID (5) AAAH 55H 555H AAAH...
Description TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS

File Size 535.38K  /  50 Page

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    TH50VSF3680 TH50VSF3681AASB TH50VSF368

TOSHIBA[Toshiba Semiconductor]
Part No. TH50VSF3680 TH50VSF3681AASB TH50VSF368
OCR Text ...IOS = VCC (x16, x16) 1 2 3 4 5 6 7 8 9 10 PIN NAMES A0~A22 A12S A12F SA DQ0~DQ15 CEF OE A15 A21 NC A16 NC NC Address Inputs A12 Input f...30H AAH 2AAH 555H AAH B0H 30H 60H BPA (9) 55H 555H BK (3) ID (5) AAAH 55H 555H AAAH...
Description SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE

File Size 580.07K  /  55 Page

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    TH58NVG1S3AFT TH58NVG1S3AFT05

TOSHIBA[Toshiba Semiconductor]
Part No. TH58NVG1S3AFT TH58NVG1S3AFT05
OCR Text ...l Powersupply VCC 2.7 V to 3.6 V Program/Erase Cycles 1E5 Cycles(With ECC) Access time Cell array to register 25 s max Serial Read Cycle ...30H Col. Add. N RY / BY Read Cycle Timing Diagram : When Interrupted by /CE tCLEA CLE tCLS tC...
Description Flash - NAND
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

File Size 364.12K  /  32 Page

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