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Wuxi NCE Power Semicond...
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| Part No. |
NCE6007aS
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| OCR Text |
... r ds(on) < 35m ? @ v gs =4.5v typ 27m ? high density cell design for ultra low rdson fully characterized avalanche volta...7a 22 30 m ? drain-source on-state resistance r ds(on) v gs =4.5v, i d =6a 27 35 m ? f... |
| Description |
NCE N-Channel Enhancement Mode Power MOSFET
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| File Size |
403.39K /
7 Page |
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it Online |
Download Datasheet
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TY Semiconductor Co., Ltd
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| Part No. |
IRLML6402TRPBF
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| OCR Text |
...uous drain current, v gs @ -4.5v -3.7 i d @ t a = 70c continuous drain current, v gs @ -4.5v -2.2 a i dm pulsed drain current -22 p d...7a. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 ??? ??... |
| Description |
HEXFET Power MOSFET
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| File Size |
152.06K /
2 Page |
View
it Online |
Download Datasheet
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Price and Availability
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