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5a 1200v Datasheet PDF File

For 5a 1200v Found Datasheets File :: 652 Search Time::1.579ms
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				International Rectifier
Part No.	IRG7PH30K10PBF IRG7PH30K10PBF-15
OCR Text	...8 16 14 12 10 8 6 4 2 0 ICE = 4.5a ICE = 18A ICE = 9.0A ICE (A) 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 5 10 VGE (V) 15 20 VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 175C; tp = 80s 18 16 14 12 14 12 10 ...
Description	INSULATED GATE BIPOLAR TRANSISTOR
File Size	319.22K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG7PH30K10DPBF
OCR Text	...6 4 2 0 5 10 VGE (V) ICE = 4.5a ICE = 9.0A ICE = 18A 6 4 2 0 ICE = 4.5a ICE = 9.0A ICE = 18A 15 20 5 10 VGE (V) 15 20 Fig. 9 - Typical VCE vs. VGE TJ = -40C 12 10 8 VCE (V) ICE, Collector-to-Emitter Current ...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	435.24K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SGP02N12007 SGP02N120 SGD02N120 SGI02N120
OCR Text	...25C, Tj 150C) 7A 60W 6A 50W 5a 4A 3A 2A 1A 0A 25C 40W 30W 20W 10W 0W 25C IC, COLLECTOR CURRENT Ptot, POWER DISSIPAT...1200v, start at Tj = 25C) VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector cu...
Description	Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
File Size	375.94K / 13 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SGB02N12007 SGB02N120
OCR Text	...25C, Tj 150C) 7A 60W 6A 50W 5a 4A 3A 2A 1A 0A 25C 40W 30W 20W 10W 0W 25C IC, COLLECTOR CURRENT Ptot, POWER DISSIPAT...1200v, start at Tj = 25C) VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector cu...
Description	Fast IGBT in NPT-technology Lower Eoff compared to previous generation
File Size	433.31K / 11 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IHW25N120R2
OCR Text	...C 25C 2.0V IC=25a 1.5V IC=12.5a 1.0V 0.5V 0.0V 0C 50C 100C 150C VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as ...
Description	Reverse Conducting IGBT with monolithic body diode
File Size	400.71K / 12 Page	View it Online	Download Datasheet

				http:// Fairchild Semiconductor
Part No.	FGA25N120ANTD07 FGA25N120ANTDF109 FGA25N120ANTD
OCR Text	...5a 8 40A 25a 4 IC = 12.5a 1.5 25 50 75 100 125 0 0 4 8 12 16 20 Case Temperature, TC [C] Gate-Emitter Voltage, VGE [V] ...1200v NPT Trench IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics ...
Description	1200v NPT Trench IGBT
File Size	582.44K / 9 Page	View it Online	Download Datasheet

				Cree, Inc
Part No.	CMF10120D
OCR Text	...oltage 3.5 v v gs = -5v, i f = 5a, t j = 25oc 3.1 v gs = -2v, i f = 5a, t j = 25oc t rr reverse recovery time 138 ns v gs = -5v, i ...1200v sic schottky 90% 10% v ds v gs t on t off t fv t d(on)v t d(off)v t rv cm...
Description	Silicon Carbide Power MOSFET
File Size	684.16K / 9 Page	View it Online	Download Datasheet

				Infineon
Part No.	SKP02N120
OCR Text	...0c 75c 100c 125c 0a 1a 2a 3a 4a 5a 6a 7a t c , case temperature t c , case temperature figure 3. power dissipation as a function of case t...1200v, start at t j = 25 c) figure 20. typical short circuit collector current as a function of g...
Description	IGBTs & DuoPacks - 2A 1200v TO220AB IGBT Diode
File Size	376.02K / 13 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp.
Part No.	ISL9R18120G2NL ISL9R18120P2NL
OCR Text	... o c t b at i f = 30a, 15a, 7.5a t a at i f = 30a, 15a, 7.5a 5 10 15 20 25 0 3 6 9 12 15 18 21 24 27 30 i f , forward current (a) i rm(r...1200v stealth diod e, to263/d2pak package general description back to to...
Description	18A, 1200v Stealt Diode 18 A, 1200 V, SILICON, RECTIFIER DIODE, TO-247 18A, 1200v Stealth Diode 18 A, 1200 V, SILICON, RECTIFIER DIODE, TO-220AC
File Size	239.30K / 9 Page	View it Online	Download Datasheet

				Microsemi, Corp.
Part No.	APT75GN120J
OCR Text	... c = 150a i c = 75a i c = 37.5a i c = 150a i c = 75a i c = 37.5a 050-7609 rev c 4-2006 apt75gn120j v ge =15v,t j =125c v ge =15v,t j =25c v ce = 800v r g = 1.0 ? l = 100 h switching energy l...
Description	Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 68; 124 A, 1200 V, N-CHANNEL IGBT
File Size	286.25K / 6 Page	View it Online	Download Datasheet

For 5a 1200v Found Datasheets File :: 652 Search Time::1.579ms
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