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ST Microelectronics
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| Part No. |
STB8NC70Z STB8NC70ZT4 STP8NC70Z STP8NC70ZFP STB8NC70Z-1
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| OCR Text |
... ns q g total gate charge v dd =560v,i d = 7.5 a, v gs =10v 55 77 nc q gs gate-source charge 14 nc q gd gate-drain charge 21 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 560v, i d = 7.5 a, r... |
| Description |
N-CHANNEL 700V 0.90 OHM 6.8A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET
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| File Size |
538.58K /
13 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
STB7NC70Z-1
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| OCR Text |
...ns q g total gate charge v dd = 560v, i d = 7a, v gs = 10v 47 66 nc q gs gate-source charge 11 nc q gd gate-drain charge 19 nc symbol parameter test condit ions min. typ. max. unit t r(voff) off-voltage rise time v dd = 560v, i d =7a, r g =... |
| Description |
N-CHANNEL 700V 1.1OHM 6A TO-220 TO-220FP I2PAK ZENER PROTECTED POWERMESH III MOSFET
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| File Size |
120.80K /
11 Page |
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it Online |
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STMicroelectronics
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| Part No. |
STD2NK70Z STD2NK70Z-1 STD2NK70Z06
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| OCR Text |
...ain charge
VGS=0, VDS =0V to 560v VDD=350 V, ID= 0.8A, RG=4.7, VGS=10V (see Figure 14) VDD=560v, ID = 0.8A VGS =10V (see Figure 15)
1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capaci... |
| Description |
N-channel 700V - 6Ω - 1.6 A - DPAK/IPAK Zener protected SuperMESH Power MOSFET 1.6 A, 700 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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| File Size |
419.91K /
16 Page |
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it Online |
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Price and Availability
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