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  25w channel Datasheet PDF File

For 25w channel Found Datasheets File :: 885    Search Time::1.812ms    
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    APT8020B2FLL APT8020LFLL

ADPOW[Advanced Power Technology]
Part No. APT8020B2FLL APT8020LFLL
OCR Text ...rting T = +25C, L = 4.16mH, R = 25w, Peak I = 38A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID[Cont.] di/dt 700A/s VR VDSS TJ 150C APT Reserves the right to change, without not...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS.

File Size 58.72K  /  2 Page

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    APT8020B2LL APT8020LLL APT6029BLL APT6029SLL

ADPOW[Advanced Power Technology]
Part No. APT8020B2LL APT8020LLL APT6029BLL APT6029SLL
OCR Text ...rting T = +25C, L = 4.15mH, R = 25w, Peak I = 38A temperature. j G L 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID[Cont.] di/dt 700A/s...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS.

File Size 56.99K  /  2 Page

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    APT8020JFLL APT6017JFLL

ADPOW[Advanced Power Technology]
Part No. APT8020JFLL APT6017JFLL
OCR Text ...rting T = +25C, L = 5.51mH, R = 25w, Peak I = 33A temperature. j G L 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID[Cont.] di/dt 700A/s...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS.

File Size 58.28K  /  2 Page

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    APT8020JLL

Advanced Power Technology
Part No. APT8020JLL
OCR Text ...rting T = +25C, L = 5.51mH, R = 25w, Peak I = 33A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID Cont. di/dt 700A/s VR VDSS TJ 150C [ ] APT Reserves the right to change, without ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS.

File Size 56.75K  /  2 Page

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    APT8024B2FLL APT8024LFLL

ADPOW[Advanced Power Technology]
Part No. APT8024B2FLL APT8024LFLL
OCR Text ...rting T = +25C, L = 5.20mH, R = 25w, Peak I = 31A j G L 5 The maximum current is limited by lead temperature 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS.

File Size 58.10K  /  2 Page

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    APT8024B2LL APT8024LLL

ADPOW[Advanced Power Technology]
Part No. APT8024B2LL APT8024LLL
OCR Text ...rting T = +25C, L = 5.20mH, R = 25w, Peak I = 31A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID[Cont.] di/dt 700A/s VR VDSS TJ 150C APT Reserves the right to change, without not...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS.

File Size 57.21K  /  2 Page

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    APT8024B2VFR APT8024LVFR APT50M85B2VFR APT50M85LVFR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT8024B2VFR APT8024LVFR APT50M85B2VFR APT50M85LVFR
OCR Text ...rting T = +25C, L = 5.51mH, R = 25w, Peak I = 33A j G L 5 I -I [Cont.], di/ = 100A/s, T 150C, R = 2.0W, V = 200V. S D j G R dt 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380...
Description Power MOS V is a new generation of high voltage N-channel enhancement mode power MOSFETs.
POWER MOS V 800V 33A 0.240 Ohm

File Size 39.43K  /  2 Page

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    APT8024B2VR APT8024LVR

ADPOW[Advanced Power Technology]
Part No. APT8024B2VR APT8024LVR
OCR Text ...rting T = +25C, L = 5.51mH, R = 25w, Peak I = 33A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, ...
Description POWER MOS V 800V 33A 0.240 Ohm
Power MOS V is a new generation of high voltage N-channel enhancement mode power MOSFETs.

File Size 38.06K  /  2 Page

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    APT8024JFLL

ADPOW[Advanced Power Technology]
Part No. APT8024JFLL
OCR Text ...rting T = +25C, L = 5.95mH, R = 25w, Peak I = 29A temperature. j G L 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID[Cont.] di/dt 700A/s...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS.

File Size 58.21K  /  2 Page

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    APT8024JLL APT6021BLL APT6021SLL APT8014JLL APT8020JLL

ADPOW[Advanced Power Technology]
Part No. APT8024JLL APT6021BLL APT6021SLL APT8014JLL APT8020JLL
OCR Text ...rting T = +25C, L = 5.95mH, R = 25w, Peak I = 29A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID[Cont.] di/dt 700A/s VR VDSS TJ 150C APT Reserves the right to change, without not...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS.

File Size 56.72K  /  2 Page

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For 25w channel Found Datasheets File :: 885    Search Time::1.812ms    
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