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Advanced Power Electron...
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| Part No. |
AP6N3R1LH
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| OCR Text |
... output capacitance v ds =30v - 2550 - pf c rss reverse transfer capacitance f=1.0mhz - 35 - pf r g gate resistance f=1.0mhz - 3 6 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =50a,... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
69.75K /
6 Page |
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it Online |
Download Datasheet
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GTM
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| Part No. |
GI08P10
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| OCR Text |
...x. -3.0 100 -1 -25 200 250 25.6 2550 12
Unit V V/ : V S nA uA uA m
Test Conditions VGS=0, ID=-250uA Reference to 25 : , ID=-1mA VDS=VG...0MHz f=1.0MHz
Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-... |
| Description |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
318.28K /
4 Page |
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it Online |
Download Datasheet |
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GTM
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| Part No. |
GJ08P10
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| OCR Text |
...x. -3.0 100 -1 -25 200 250 25.6 2550 12
Unit V V/ : V S nA uA uA m
Test Conditions VGS=0, ID=-250uA Reference to 25 : , ID=-1mA VDS=VG...0MHz f=1.0MHz
Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-... |
| Description |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
299.58K /
4 Page |
View
it Online |
Download Datasheet |
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