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				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SJ363
OCR Text	...-- -- -- 0.6 0.35 2.0 2.1 100 0.25 1.65 8 25.9 14.9 Max -- -- 5 -1 -2.0 0.75 0.45 -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF s s s ...pe ra tio n 0.5 -0.03 -0.01 0 50 100 150 Ta (C) 200 -0.1 -0.3 -1 Ta = 25 C -3 -1...
Description	Silicon P-Channel MOS FET
File Size	36.88K / 7 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ386
OCR Text	...00 150 Ta (C) 200 -0.1 Ta = 25 C 1 shot pulse -0.3 -1 -3 -10 -30 -100 Ambient Temperature Drain to Source Voltage V DS (V) Typical Output Characteristics -2.0 -5 V -4 V -3.5 V -5 -3 V Typical Transfer Characteristics V ...
Description	Silicon P-Channel MOS FET
File Size	37.10K / 7 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SJ399
OCR Text	...d by R DS(on) -0.003 Ta = 25 C 0 50 100 150 Ta (C) 200 -0.001 -0.1 -0.3 -1 -3 -10 -30 -100 Ambient Temperature Drain to Source Voltage V DS (V) Typical Output Characteristics -2.0 Pulse Test I D (A) -5 V Typical Trans...
Description	Silicon P-Channel MOS FET
File Size	36.00K / 7 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ450
OCR Text	... pe ra 10 s m tio n Ta = 25 C 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) 0 50 100 150 Tc (C) 200 0.1 Case Temperature -2.0 Typical Output Characteristics -10 V -6 V -4 V -3 V Pulse Test (A) -2.5 V ...
Description	Silicon P-Channel MOS FET
File Size	43.82K / 9 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SJ451
OCR Text	...R DS(on) tio n 50 Ta = 25 C -1 -3 -10 -30 -100 V DS (V) Drain to Source Voltage 0 50 100 150 Ta (C) 200 -0.1 -0.3 Ambient Temperature -0.20 Typical Output Characteristics -10 V -4 V Pulse Test -2.5 V (A) -0....
Description	Silicon P-Channel MOS FET
File Size	39.56K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ452
OCR Text	...n) pe ra tio n 50 Ta = 25 C -1 -3 -10 -30 -100 V DS (V) Drain to Source Voltage 0 50 100 150 Ta (C) 200 -0.1 -0.3 Ambient Temperature -0.20 Typical Output Characteristics -10 V -6 V -0.20 -4 V -3 V Typ...
Description	Silicon P-Channel MOS FET
File Size	39.33K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ471
OCR Text	... * Low on-resistance R DS(on) = 25 m typ. * 4V gate drive devices. * High speed switching Outline TO-220CFM D G 12 3 S 1....pe O sh ) ) (T c = 25 C 0 50 100 150 200 Case Temperature Tc (C) -...
Description	Silicon P Channel DV-L MOS FET High Speed Power Switching
File Size	46.25K / 10 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ479 2SJ479L 2SJ479S
OCR Text	... * Low on-resistance R DS(on) = 25 m typ. * 4V gate drive devices. * High speed switching Outline LDPAK 4 4 D 1 1 2 3 G ...pe O (1 ot ) (T c = 25 C ) 0 50 100 150 200 Case Temperature Tc (C)...
Description	Power switching MOSFET Silicon P Channel DV-L MOS FET High Speed Power Switching Silicon P Channel DVL MOS FET High Speed Power Switching
File Size	37.54K / 7 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ483
OCR Text	...rea is limited by R DS(on) Ta = 25 C -1 n tio ra pe O -0.03 -0.01 0 50 100 150 Ta (C) 200 Ambient Temperature -0.01 -0.03 -0.1 -0.3 -3 -10 -30 -100 Drain to Source Voltage V DS (V) Typical Output Characteristics -10 V -6 V ...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	42.73K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ484
OCR Text	... Ambient Temperature Ta = 25 C -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Drain to Source Voltage V DS (V) -5 Typical Output Characteristics -10 V -6 V -5 V -4.5 V -4 V (A) Typical Transfer Characteristics -5 V DS = -10 V Pulse Test ...
Description	Silicon P-Channel MOS FET High Speed Power Switching
File Size	42.55K / 9 Page	View it Online	Download Datasheet

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