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INFINEON[Infineon Technologies AG]
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| Part No. |
SGB15N60HS Q67040-S4535
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| OCR Text |
...e recovery. 13 14 209 15 0.32 0.21 0.53 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn... |
| Description |
High Speed IGBT in npt-technology
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| File Size |
321.77K /
11 Page |
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it Online |
Download Datasheet
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INFINEON[Infineon Technologies AG]
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| Part No. |
SGW02N120
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| OCR Text |
... 23 16 260 61 0.16 0.06 0.22 30 21 340 80 0.21 0.08 0.29 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay ti... |
| Description |
Fast IGBT in npt-technology
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| File Size |
307.92K /
11 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SGW50N60HS
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| OCR Text |
... Tj Marking Package PG-TO-247-3-21
PG-TO-247-3-21
G
E
Type SGW50N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C
0.88mJ 150C G50N60HS Symbol VCE IC
Value 600 100 50
Unit V ... |
| Description |
High Speed IGBT in npt-technology
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| File Size |
327.64K /
11 Page |
View
it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SKP02N120 SKB02N120
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| OCR Text |
... 23 16 260 61 0.16 0.06 0.22 30 21 340 80 0.21 0.08 0.29 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay ti... |
| Description |
Fast IGBT in npt-technology with soft, fast recovery anti-parallel EmCon diode
Fast IGBT in npt-technology with soft fast recovery anti-parallel EmCon diode
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| File Size |
406.61K /
14 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SKW07N120
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| OCR Text |
...ode reverse recovery. 27 29 440 21 0.6 0.4 1.0 35 38 570 27 0.8 0.55 1.35 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time ... |
| Description |
Fast IGBT in npt-technology with soft, fast recovery anti-parallel EmCon diode 快速IGBT在不扩散核武器条约与软，恢复快反平行快恢复二极管技
Fast IGBT in npt-technology with soft fast recovery anti-parallel EmCon diode
IGBTs & DuoPacks - 7A 1200V TO247AC IGBT Diode
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| File Size |
401.08K /
13 Page |
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it Online |
Download Datasheet |
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IXYS[IXYS Corporation]
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| Part No. |
IXDN55N120D1 IXDN55N120
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| OCR Text |
...9 0.174 0.191 0.987 0.004 0.180 21.08
miniBLOC, SOT-227 B
Cies Coes Cres Qg td(on) tr td(off) tf Eon Eoff RthJC RthCK
M4 screws (4x) supplied
Reverse Diode (FRED) [D1 version only] Symbol VF IF IRM trr trr RthJC Conditions
Ch... |
| Description |
IGBT Discretes: npt IGBT
High Voltage IGBT with optional Diode
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| File Size |
71.53K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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