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  2000v us Datasheet PDF File

For 2000v us Found Datasheets File :: 471    Search Time::1.203ms    
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    IGD01N120H2 IGP01N120H207

Infineon Technologies AG
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Infineon Technologies A...
Part No. IGD01N120H2 IGP01N120H207
OCR Text ... 100C 150C 1000V/us 2000v/us 3000V/us Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 1A, RG = 241, dynamic test ci...
Description HighSpeed 2-Technology

File Size 905.76K  /  13 Page

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    ACT9200SSC

Advanced Crystal Technology
Part No. ACT9200SSC
OCR Text ...en low. Disable time 100nS max >2000v 5ppm 250pS typical, 300pS max 100K int'l pull up resistor MIL STD 883 Method 3015 first year max @2...us at: 3 The Business Centre, Molly Millars Lane, Wokingham, Berks, RG41 2EY, UK http://www.actcr...
Description a miniature, low profile SMD

File Size 475.33K  /  6 Page

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    DCR4880M35 DCR4880M40 DCR4880M42

Dynex Semiconductor
Part No. DCR4880M35 DCR4880M40 DCR4880M42
OCR Text ...dV/dt* dI/dt 4200V 4880A 60800A 2000v/s 400A/s APPLICATIONS High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATING...us) 0 0 5 10 15 20 25 30 Rate of decay of on-state current, di/dt - (A/us) Fig.12 Stored charg...
Description Phase Control Thyristor

File Size 236.34K  /  10 Page

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    ACT9200SSCL

Advanced Crystal Technology
Part No. ACT9200SSCL
OCR Text ...5mS max, 2mS Typ Not Available >2000v 5ppm 150pS max, 100pS Typical See examples Frequency dependant Pin 1 must be O/C MIL STD 883 Met...us at: 3 The Business Centre, Molly Millars Lane, Wokingham, Berks, RG41 2EY, UK http://www.actcryst...
Description miniature, low profile SMD

File Size 300.40K  /  5 Page

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    INFINEON[Infineon Technologies AG]
Part No. Q67040-S4655 IKA03N120H2 Q67040-S4649
OCR Text ... 125C 150C 1000V/us 2000v/us 3000V/us Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 3A, RG = 82, dynamic test cir...
Description IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT FullPak
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
High Speed CMOS Logic Hex Non-Inverting Buffers 16-TSSOP -55 to 125

File Size 332.84K  /  14 Page

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    EM Microelectronic-Marin SA
Part No. EM4469V0WS6 EM4469V0WT11 EM4469V0WS11 EM4469V0WS7 EM4469V0WT27 EM4469V0WS27 EM4469V0WT6 EM4469V0WT7 EM4469V0WW11 EM4469V0WW27 EM4469V0WW6 EM4469V0WW7 EM4469V1WS11 EM4469V1WS27 EM4469V3CI2LB EM4469V3CI2LC EM4469V3WW11 EM4469V3WW27 EM4469V3WW6 EM4469V3WW7 EM4469V1WW27 EM4469V2WW27 EM4469V1WT27 EM4469V2WT27 EM4469V3WT27 EM4469V1WS6 EM4469V2WS6 EM4469V3WS6 EM4469V2WS27 EM4469V3WS27 EM4469V1WT7 EM4469V2WT7 EM4469V3WT7 EM4469V2WS11 EM4469V3WS11 EM4469V3CB2RC EM4469V1WS7 EM4469V3WS7 EM4469V1WW11 EM4469V2WW11 EM4469V2WT6 EM4469V2WT11
OCR Text ... mil-std-883c method 3015 v esd 2000v table 1 stresses above these listed maximum ratings may cause permanent damages to the device. exposur...us 0 - us 31 6 user free rw us 0 - us 31 7 user free rw us 0 - us 31 8 user free rw us 0 - us 31 9 u...
Description 512 bit Read/Write Contactless Identification Device

File Size 271.66K  /  11 Page

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    IGP03N120H208 IGW03N120H2

Infineon Technologies AG
Infineon Technologies A...
Part No. IGP03N120H208 IGW03N120H2
OCR Text ... 125C 150C 1000V/us 2000v/us 3000V/us Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 3A, RG = 82, dynamic test cir...
Description HighSpeed 2-Technology

File Size 340.03K  /  13 Page

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