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				SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4F160411C-B K4F170411C-F K4F170411C-B K4F160411C-F K4F160412C-B K4F170412C-B K4F160412C-F K4F170412C-F
OCR Text	... i cc5 normal l don t care 0.5 200 0.5 200 1 250 1 250 ma ua i cc6 don t care -50 -60 90 80 110 100 90 80 110 100 ma ma i cc7 l don t car...column address t aa 25 30 ns 3,10 cas to output in low-z t clz 0 0 ns 3 output buffer turn-off dela...
Description	4M x 4Bit CMOS Dynamic RAM with Fast Page Mode 4米4位的CMOS动态随机存储器的快速页面模
File Size	227.73K / 20 Page	View it Online	Download Datasheet

				http://
Part No.	HYB18TC1G800BF-3S
OCR Text	...ns when run at a clock rate of 200 mhz. a list of the performance tables for the various speeds can be found below ? table 1 ?performance t...column and bank address information in aras - cas multiplexing style. the ddr2 device operates with...
Description	1-Gbit DDR2 SDRAM
File Size	1,449.64K / 54 Page	View it Online	Download Datasheet

				http:// SIEMENS AG
Part No.	HYB514265BJ-45 HYB514265BJ-40 HYB514265BJ-400 HYB314265BJL-45 Q67100-3036 Q67100-3035 HYB314265BJ-45 HYB314265BJ-50
OCR Text	... (l-version) 200 m a -400 -40 -45 -50 t rc 69 69 79 89 ns t rac 40 40 45 50 ns t cac 10 10 12 13 ns t aa 20 20 22 25 ns t...column address strobe we read/write input oe output enable i/o1 C i/o16 data input/output v cc power...
Description	256K x 16-Bit EDO-Dynamic RAM 256K x 16位江户动态随机存储器
File Size	1,327.92K / 28 Page	View it Online	Download Datasheet

				OKI SEMICONDUCTOR CO., LTD.
Part No.	MSM51V16800D-50TS-K MSM51V16800DSL-60JS MSM51V16800DSL-70TS-K MSM51V16800DSL-50 MSM51V16800D-60JS
OCR Text	...0.4 10 10 65 2 0.5 65 65 300 5 200 200 200 v v m a m a ma ma ma ma m a ma 1, 2 1, 2 1, 2 1, 5 1 1 m a 1, 5 t rc = 31.3 m s, average pow...column address access time from cas precharge cas to data output buffer turn-off delay time trans...
Description	2,097,152-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 2097152字8位动态随机存储器：快速页面模式型
File Size	460.10K / 17 Page	View it Online	Download Datasheet

				International Business Machines, Corp.
Part No.	IBM13Q32734BCA-10Y
OCR Text	...cument. page 1 of 15 features ? 200-pin jedec standard, registered 8-byte dual in-line memory module ? 32m x 72 synchronous dram dimm ? perf...column/bank) ? 4096 refresh cycles distributed across 64ms ? parallel presence detect ? card size: 6...
Description	x72 SDRAM Module 32M x 72 Registered SDRAM Module(32M x 72 200脚寄存同步动态RAM模块) 32M × 72配置注册内存模块2M × 72配置200脚寄存同步动态内存模块）
File Size	112.61K / 15 Page	View it Online	Download Datasheet

				天津新技术产业园区管理委员会
Part No.	IS43R32400A-6B IS43R32400A-5B
OCR Text	...ts. features ? clock frequency: 200, 166, 100 mhz ? power supply (v dd and v ddq ): 2.5v ? sstl 2 interface ? four internal banks to hide ...column address latch burst counter column address buffer column decoder data in buffer data out buff...
Description
File Size	1,287.02K / 25 Page	View it Online	Download Datasheet

				Integrated Silicon Solution, Inc.
Part No.	IS43R32400A-5B IS43R32400A-6B
OCR Text	...ts. features ? clock frequency: 200, 166, 100 mhz ? power supply (v dd and v ddq ): 2.5v ? sstl 2 interface ? four internal banks to hide ...column address latch burst counter column address buffer column decoder data in buffer data out buff...
Description	4Meg x 32 128-MBIT DDR SDRAM
File Size	1,288.59K / 25 Page	View it Online	Download Datasheet

				Integrated Silicon Solution, Inc.
Part No.	IS43R16800A1-5TL
OCR Text	...s. features ? clock frequency: 200, 166 mhz ? power supply (v dd and v ddq ): 2.6v ? sstl 2 interface ? four internal banks to hide row p...column address latch burst counter column address buffer column decoder data in buffer data out buff...
Description	8Meg x 16 128-MBIT DDR SDRAM
File Size	2,178.48K / 72 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
OCR Text	...0412D 90 80 1 1 90 80 80 70 0.5 200 90 80 250 200 K4E160412D 110 100 1 1 110 100 90 80 0.5 200 110 100 250 200 K4E170411D 90 80 2 1 90 80 80...column address CAS to output in Low-Z Output buffer turn-off delay from CAS OE to output in Low-Z Tr...
Description	4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
File Size	254.50K / 21 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
OCR Text	...0412D 90 80 1 1 90 80 80 70 0.5 200 90 80 250 200 K4F160412D 110 100 1 1 110 100 90 80 0.5 200 110 100 250 200 K4F170411D 90 80 2 1 90 80 80...column address CAS to output in Low-Z Output buffer turn-off delay Transition time (rise and fall) R...
Description	4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
File Size	223.25K / 20 Page	View it Online	Download Datasheet

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