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  2.21m Datasheet PDF File

For 2.21m Found Datasheets File :: 250    Search Time::2.063ms    
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    MICROSEMI[Microsemi Corporation]
Part No. LX2203AILD LX2203A
OCR Text ... 10 BAT BAT CMP EN CCP 2 9 3 8 4 Connect Bottom to Power GND 7 5 6 THERMAL DATA LD PACKAGE (Top View...21M STAT LX2203A CMP CTP GND EN CCP ON/OFF Figure 3 -Basic charger from Wall Adapter with 1...
Description Li-Ion Battery Charger

File Size 173.86K  /  11 Page

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    MICROSEMI[Microsemi Corporation]
Part No. LX2203CLD LX2203
OCR Text ... 10 BAT BAT CMP EN CCP 2 9 3 8 4 Connect Bottom to Power GND 7 5 6 THERMAL DATA LD PACKAGE (Top View...21M GND 150k ON/OFF CP1 CP2 BSS138DW-7 IBAT 100mA 500mA 1.0A CP1 L L H CP2 L H H...
Description Li-Ion Battery Charger

File Size 177.91K  /  11 Page

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    CET[Chino-Excel Technology]
Part No. CED51A3 CEU51A3
OCR Text ...ulse Width < 300s, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 6 - 71 CED51A3/CEU51A3 30 VGS=10,8,6,5,4V 100 25 C ID, Drain Current (A) ID, Drain Current (A) 24 80 18 60 VGS=3V 12...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 137.15K  /  4 Page

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    ZXTP19020CFFTA ZXTP19020CFF

Diodes Incorporated
ZETEX
Part No. ZXTP19020CFFTA ZXTP19020CFF
OCR Text ...1 0.84 6.72 1.34 10.72 1.5 12.0 2.0 16.0 -55 to 150 Unit V V V V A A A W mW/C W mW/C W mW/C W mW/C C Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Junction to ambient(c) Junction to ambient(d) Symbol R JA R ...
Description 20V, SOT23F, PNP medium power transistor

File Size 422.43K  /  8 Page

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    P2103NVG

List of Unclassifed Manufacturers
ETC
Part No. P2103NVG
OCR Text ...-Channel P-Channel 30 20 7 6 28 2 1.3 -55 to 150 275 -30 20 -6 -5 -24 UNITS V V TC = 25 C TC = 70 C ID IDM A TC = 25 C TC = 70 C PD Tj, Tstg TL W C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient...
Description N- & P-Channel Enhancement Mode Field Effect Transistor

File Size 558.19K  /  8 Page

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    LT3591 LT3491 LT3494 LT3494A LT3497 LT3498 LT3498EDDB LQH32CN150K53 LQH2MCN100K02 LQH2MCN150K02 LT3473A LT3465A LQH32CN1

Linear Technology
Part No. LT3591 LT3491 LT3494 LT3494A LT3497 LT3498 LT3498EDDB LQH32CN150K53 LQH2MCN100K02 LQH2MCN150K02 LT3473A LT3465A LQH32CN100K53 LT3463A
OCR Text ...put boost converter featuring a 2.3MHz PWM LED Driver and PFM OLED Driver. It includes an internal power switch and Schottky diode for each ...21M 50 0 100 3498 TA01b 3498f 1 LT3498 ABSOLUTE MAXIMUM RATINGS (Notes 1, 2) PACKAG...
Description 20mA LED Driver and OLED Driver with Integrated Schottky in 3mm x 2mm DFN

File Size 438.14K  /  24 Page

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    AO8846

Alpha & Omega Semiconductors
Part No. AO8846
OCR Text ...GS = 3.1V) RDS(ON) < 22m (VGS = 2.5V) RDS(ON) < 27m (VGS = 1.8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 1.8K D1 D2 G2 1.8K S1 S2 Absolute Maximum Ratings TA=25C unless otherwise noted Symbo...
Description Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 202.74K  /  4 Page

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    PJ1870

Pan Jit International Inc.
Part No. PJ1870
OCR Text ....5V,IDS@6.0A=21m * RDS(ON), VGS@2.5V,IDS@5.5A=27m * Advanced trench process technology * High Density Cell Design For Uitra Low On-Resistance * Specially Designed for Li-lon or Li-Polymer battery packs * ESD Protected 1.5KV HBM * Pb free pr...
Description 20V Common-Drain Dual N-Channel MOSFET-ESD Protected

File Size 178.30K  /  5 Page

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    T62M0002A07 T62M0002A-D T62M0002A-DG T62M0002A-KG T62M0002A

TM Technology, Inc.
Taiwan Memory Technology
Part No. T62M0002A07 T62M0002A-D T62M0002A-DG T62M0002A-KG T62M0002A
OCR Text ... CC1 + + MOD + - 1 /2 VC C VCC R EF A GN D PIN Configuration TM Technology Inc. reserves the right to change prod...21M 1.69k 14M 4.02k 37.6ms 0.14% 22M 1.49k 15M 3.48k 35.0ms 0.14% 16M 3.08k 33.0ms 0.14% ...
Description Digital Sound Processor Embedded SRAM

File Size 59.45K  /  7 Page

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    TSM4410DCSRL TSM4410D

Taiwan Semiconductor Company, Ltd
Part No. TSM4410DCSRL TSM4410D
OCR Text 2. Gate 1 3. Source 2 4. Gate 2 Vds = 25V 8. Drain 1 7. Drain 1 6. Drain 2 5. Drain 2 Id = 10A Rds(on), Vgs @ 10V, Ids @ 10A = 21m Rds(on), Vgs @ 4.5V, Ids @ 8A = 15m Features Advanced trench process technology High density cell ...
Description Dual N-Channel Enhancement Mode MOSFET

File Size 160.41K  /  5 Page

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