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TE Connectivity, Ltd.
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| Part No. |
L4931ABXX35
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| OCR Text |
1a) n very low quiescent current n thermal shutdown n short circuit protection n reverse polarity protection description the l4941 is a thre...5a to 1a 5 15 mv i q quiescent current i o =5ma v i =6v 4 8 ma i o =1a v i =6v 20 40 ma d i q quiesc... |
| Description |
VERY LOW DROP VOLTAGE REGULATOR WITH INHIBIT 很好低压差电压调节器抑制研究
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| File Size |
1,443.42K /
14 Page |
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Fairchild Semiconductor, Corp.
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| Part No. |
KSC5338DTU
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| OCR Text |
...t c =125 c4 6 v ce =2.5v, i c =1a t c =25 c1825 t c =125 c14 18 v ce (sat) collector-emitter saturation voltage i c =0.8a, i b =0.08a t c...5a, f=1mhz 550 750 pf c ob output capacitance v cb =10v, i e =0, f=1mhz 60 100 pf f t current gain b... |
| Description |
NPN Triple Diffused Planar Silicon Transistor; Package: TO-220; No of Pins: 3; Container: Rail 5 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
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| File Size |
121.09K /
9 Page |
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it Online |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
BULD1101ET4 BULD1101E BULD1101E-1
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| OCR Text |
... = IE =1mA 0) IC =100mA 450 IC =1A IC =1A IC =1A IB =0.2A IB =0.2A IB =0.2A 20 23 6 4 38 44 10 7 TJ=125C 0.25 0.6 12
V(BR)EBO
24
V
...5A VCC =125V VBE(off) =-5V L =2mH IBR 2.5A
ts tf Ear
Resistive load Storage time Fall time Rep... |
| Description |
High voltage fast-switching NPN Power Transistor
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| File Size |
247.41K /
11 Page |
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it Online |
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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
BUL74B
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| OCR Text |
... 390V VEB = 9V TC = 125C IC = 0.1A VCE = 1V VCE = 1V VCE = 5V VCE = 5V IB = 0.1A IB = 0.5A IB = 2A IB = 0.5A IB = 2A VCE = 4V f = 1MHz
V 10 100 10 10 100
A A A
18 10 11 8
50 30 30 20 0.1 0.5 0.8 1.2 1.5 16 90 V V --
hFE*
D... |
| Description |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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| File Size |
19.35K /
2 Page |
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it Online |
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Fairchild Semiconductor, Corp.
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| Part No. |
ISL9R18120G2NL ISL9R18120P2NL
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| OCR Text |
...n 125 w e avl avalanche energy (1a, 40mh) 20 mj t j , t stg operating and storage temperature range -55 to 150 c t l t pkg maximum temperatu...5a t a at i f = 30a, 15a, 7.5a 5 10 15 20 25 0 3 6 9 12 15 18 21 24 27 30 i f , forward current (a... |
| Description |
18A, 1200V Stealt Diode 18 A, 1200 V, SILICON, RECTIFIER DIODE, TO-247
18A, 1200V Stealth Diode 18 A, 1200 V, SILICON, RECTIFIER DIODE, TO-220AC
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| File Size |
239.30K /
9 Page |
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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
BUL64A
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| OCR Text |
...C IB = 0 VEB = 9V IC = 0 IC = 0.1A IC = 0.5A IC = 1A IC = 100mA TC = 125C VCE = 5V VCE = 5V VCE = 1V TC = 125C IB = 20mA IB = 0.1A IB = 0.2A IB = 0.1A IB = 0.2A VCE = 4V f = 1MHz VCE = 500V
V 10 100 100 10 100
A A A
20 12 5
30 1... |
| Description |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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| File Size |
18.88K /
2 Page |
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TT electronics Semelab Limited
SEME-LAB[Seme LAB]
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| Part No. |
BUL62A
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| OCR Text |
...C IB = 0 VEB = 9V IC = 0 IC = 0.1A IC = 1A IC = 2.5A IC = 100mA TC = 125C VCE = 5V VCE = 5V VCE = 1V TC = 125C IB = 20mA IB = 0.2A IB = 0.5A IB = 0.2A IB = 0.5A VCE = 4V f = 1MHz VCE = 500V
V 10 100 100 10 100
A A A
18 12 5
20 1... |
| Description |
Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63C; Standard 2 x 1 Package
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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| File Size |
63.41K /
4 Page |
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it Online |
Download Datasheet |
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