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  19a Datasheet PDF File

For 19a Found Datasheets File :: 1127    Search Time::2.437ms    
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    HUF75309D3 HUF75309D3S HUF75309P3 HUF75309D3ST HUF75309D3STNL

Intersil
FAIRCHILD[Fairchild Semiconductor]
Part No. HUF75309D3 HUF75309D3S HUF75309P3 HUF75309D3ST HUF75309D3STNL
OCR Text 19a, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET(R) process. This advanced process technology achieves the lowest possible on-resistance per silicon area, re...
Description 19a/ 55V/ 0.070 Ohm/ N-Channel UltraFET Power MOSFETs
19a, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs

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    HUFA75309D3 HUFA75309D3S HUFA75309P3 HUFA75309D3ST

Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HUFA75309D3 HUFA75309D3S HUFA75309P3 HUFA75309D3ST
OCR Text 19a, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET(R) process. This advanced process technology achieves the lowest possible on-resistance per silicon area, re...
Description 19a, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs 19 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
19a, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs 19 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
19a/ 55V/ 0.070 Ohm/ N-Channel UltraFET Power MOSFETs
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 19a I(D) | TO-252AA

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    SPD15N06S2L-64

INFINEON[Infineon Technologies AG]
Part No. SPD15N06S2L-64
OCR Text ...ltage Qgs Qgd Qg VDD =44V, ID =19a, VGS =0 to 10V VDD =44V, ID =19a Symbol Conditions min. Values typ. 15 355 78 29 4.4 17 25 16 max. 445 105 43 6.6 26 38 24 Unit gfs Ciss Coss Crss td(on) tr td(off) tf VDS 2*ID *RDS(on)m...
Description Low Voltage MOSFETs - DPAK; 15 A; 55V; LL;64mOhm
OptiMOS Power-Transistor

File Size 267.94K  /  8 Page

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    APT10026L2LL_03 APT10026L2LL APT10026L2LL03 APT10026L2LLG

Microsemi Corporation
ADPOW[Advanced Power Technology]
Microsemi, Corp.
Part No. APT10026L2LL_03 APT10026L2LL APT10026L2LL03 APT10026L2LLG
OCR Text ... 100 500 100 3 5 (VGS = 10V, 19a) Ohms A nA Volts 12-2003 050-7024 Rev B Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = ...
Description Power MOS 7 is a new generation of low loss, high voltage, N-Channel
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN

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    Microsemi, Corp.
ADPOW[Advanced Power Technology]
Part No. APT10026L2FLL_03 APT10026L2FLL APT10026L2FLL03
OCR Text ... 100 500 100 3 5 (VGS = 10V, 19a) Ohms A nA Volts 12-2003 050-7112 Rev A Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = ...
Description 38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 101.61K  /  5 Page

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    Pulse A Technitrol Comp...
Part No. PA4334 PA4330 PA4332 PA4331 PA4304 P1170 PG0087 PA4300 PA4335 PF0601
OCR Text ...8a 3.0a 0.28a 0.34a 2.0a 1.1a 0.19a 3.0a 14a 1.2a 4.5a 1.7a 2.6a 17a 7.5a 3.0a 1.0a 0.5a 0.65a 2.0a 0.54a 0.19a 0.07a 0.17a 0.4a 0.36a 0.06a 0.13a 0.18a 1.7a 0.85a 0.21a 0.6a 0.1 1 10 100 1000 inductance (uh) product overview: s...
Description    POWER MAGNETICS

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    IRHNJ63134SCS

International Rectifier
Part No. IRHNJ63134SCS
OCR Text ...100k rads (si) 0.088 ? 19a jansr2n7589u3 irhnj63134 300k rads (si) 0.088 ? 19a jansf2n7589u3 esd rating: class 2 per mil-std-750, method 1020 pd-96931c downloaded from: http:/// irhnj67134, jansr2n...
Description 150V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package also available with Total Dose Rating of 300kRads

File Size 201.64K  /  9 Page

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    IRHNJ63130SCS

International Rectifier
Part No. IRHNJ63130SCS
OCR Text ... 0.042 ? v gs = 12v, i d = 19a resistance v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma ? v gs(th) / ? t j gate threshold voltage coefficient -8.83 mv/c g fs forward transconductance 14 s ...
Description 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. Also available with Total Dose Rating of 300kRads.

File Size 186.85K  /  9 Page

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    STK38X60LM

AUK corp
Part No. STK38X60LM
OCR Text ...V VDS=0V, VGS=30V VGS=10V, ID=0.19a VDS=10V, ID=0.19a VGS=0V, VDS=25V, f=1MHz Min. 600 3.0 - Typ. 9.3 0.95 150 20 4.3 22.5 27 11.5 27 4.5 0.9 1.3 Max. 5.0 1 100 11.5 225 30 6.4 6.7 1.3 1.9 Unit V V A nA S pF VDD=300V, VG...
Description Advanced Power MOSFET

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    MPSA20 ON2338

MOTOROLA[Motorola, Inc]
Part No. MPSA20 ON2338
OCR Text ... 50 t, TIME (ms) 100 200 FIGURE 19a DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZJA(t) = r(t) * RJA TJ(pk) - TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5 0.2 0.01 0.01 0.02 ...
Description Amplifier Transistor(NPN Silicon)
From old datasheet system

File Size 411.86K  /  8 Page

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