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  196.05 Datasheet PDF File

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    APT5028SVR

ADPOW[Advanced Power Technology]
Part No. APT5028SVR
OCR Text ...line Drain (Heat Sink) 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532) 3 1.04 (.041) 1.15 (.045) Revised 4/18/95 13.79 (.543) 13.99 (.551) Revised 8/29/97 11.51 (.453) ...
Description POWER MOS V 500V 20A 0.280 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 64.83K  /  4 Page

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    APT8043BFLL APT8043SFLL

ADPOW[Advanced Power Technology]
Part No. APT8043BFLL APT8043SFLL
OCR Text ... D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532) 3 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 1.04 (.041) 1.15 (.045) Drain 20.80 (.819) 21.46...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 58.43K  /  2 Page

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    APT8043BLL APT8043SLL

ADPOW[Advanced Power Technology]
Part No. APT8043BLL APT8043SLL
OCR Text ... D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532) 3 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 1.04 (.041) 1.15 (.045) Drain 20.80 (.819) 21.46...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.49K  /  2 Page

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    APT8052BFLL APT8052SFLL APT10026JFLL APT8014JFLL

ADPOW[Advanced Power Technology]
Part No. APT8052BFLL APT8052SFLL APT10026JFLL APT8014JFLL
OCR Text ... D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532) 3 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 1.04 (.041) 1.15 (.045) Drain 20.80 (.819) 21.46...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.43K  /  2 Page

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    APT8052BLL APT8052SLL APT10026JLL APT1201R4SLL APT12067JLL APT20M10JLL

ADPOW[Advanced Power Technology]
Part No. APT8052BLL APT8052SLL APT10026JLL APT1201R4SLL APT12067JLL APT20M10JLL
OCR Text ... D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532) 3 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 1.04 (.041) 1.15 (.045) Drain 20.80 (.819) 21.46...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.71K  /  2 Page

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    APT8065SVR

ADPOW[Advanced Power Technology]
Part No. APT8065SVR
OCR Text ...line Drain (Heat Sink) 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532) 3 1.04 (.041) 1.15 (.045) Revised 4/18/95 13.79 (.543) 13.99 (.551) Revised 8/29/97 11.51 (.453) ...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 800V 13A 0.650 Ohm

File Size 63.31K  /  4 Page

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    ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TRI ATF10736

Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
Part No. ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TRI ATF10736
OCR Text ... .037 .075 .106 .136 .166 .189 .196 .198 .195 .188 .182 .171 S22 Ang. 77 70 56 43 31 14 -5 -23 -38 -48 -64 -77 -91 Mag. .40 .38 .34 .31 .28 ...05 (0.006 0.002) 0.56 (0.022) 4.57 0.25 0.180 0.010 Notes: 1. Dimensions are in millimet...
Description 0.5-12 GHz General Purpose Gallium Arsenide FET
0.5?12 GHz General Purpose Gallium Arsenide FET
0.512 GHz General Purpose Gallium Arsenide FET

File Size 44.24K  /  4 Page

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    CXD8302Q

Sony Corporation
Part No. CXD8302Q
OCR Text ... 27 69 EQ 27 -57 VSYNC 196 (Component digital mode) 195 (Composite digital mode) 0 -9- -50 0 50 100 128 150 0 29 113 29 71 2...05 0.8 0.05 13 34 22 5 A 44 12 C 0. 1 0.3 0.1 6 11 0.8 0.15 0...
Description From old datasheet system
PLL for CCD Cameras

File Size 181.78K  /  10 Page

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    K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 K4S560432E-NC K4S560432E-NCL75 K4S561632E-NC75

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 K4S560432E-NC K4S560432E-NCL75 K4S561632E-NC75
OCR Text ...785,216 / 4 x 8,392,608 / 4 x 4,196,304 words by 4bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allow...05 BTM) 9.220.20 (1.00) (1.00) #1 #27 0.6650.05 0.2100.05 7.6 (1.10) 0.10...
Description 16M x 16 SDRAM, LVTTL, 133MHz
256Mb E-die SDRAM Specification 54pin sTSOP-II

File Size 205.22K  /  14 Page

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    K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S561632E-TC60 K4S561632E-TC75 K4S561632E-TL60 K4S561632E-TL75 K4S560432E-TL

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S561632E-TC60 K4S561632E-TC75 K4S561632E-TL60 K4S561632E-TL75 K4S560432E-TL75 K4S560432E-TC75 K4S560432E-TC
OCR Text ...785,216 / 4 x 8,392,608 / 4 x 4,196,304 words by 4bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allow...05 MIN 0.002 ( 0.50 ) 0.020 11.760.20 0.4630.008 #1 22.62 MAX 0.891 22.22 0.875 0.10 MAX 0.004...
Description 256Mb E-die SDRAM Specification 54pin sTSOP-II

File Size 196.59K  /  14 Page

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