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16mh Datasheet PDF File

For 16mh Found Datasheets File :: 118 Search Time::1.015ms
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				SEME-LAB[Seme LAB]
Part No.	SML80J28
OCR Text	...e. 2) Starting TJ = 25C, L = 10.16mh, RG = 25W, Peak IL = 16A Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk 5/99 SML80J28 STATIC ELECTRICAL RATI...
Description	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	23.98K / 2 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SK393406 2SK3934
OCR Text	...0 V, Tch = 25C (initial), L = 8.16mh, IAR = 15 A, RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 3 1 2006-11-06 ...
Description	Silicon N-Channel MOS Type Switching Regulator Applications
File Size	284.16K / 6 Page	View it Online	Download Datasheet

				Vishay Siliconix International Rectifier
Part No.	IRFL4105PBF IRFL4105TRPBF
OCR Text	...D = 25V, starting TJ = 25C, L = 16mh RG = 25, IAS = 3.7A. (See Figure 12) ISD 3.7A, di/dt 110A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. 2 www.irf.com IRFL4105PBF 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOT...
Description	Advanced Process Technology HEXFET㈢ Power MOSFET HEXFET? Power MOSFET
File Size	155.01K / 9 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDD6N50FTF FDD6N50FTM FDD6N50F FDU6N50F FDU6N50FTU
OCR Text	...mum junction temperature 2: L = 16mh, IAS = 5.5A, VDD = 50V, RG = 25, Starting TJ = 25C 3: ISD 5.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temp...
Description	N-Channel MOSFET 500V, 5.5A, 1.15Ω N-Channel MOSFET 500V, 5.5A, 1.15??/a> N-Channel MOSFET 500V, 5.5A, 1.15ヘ
File Size	311.16K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRL3803VPBF
OCR Text	.... 5 1560400 mJ IAS = 71A, L = 0.16mh Typ. --- 0.028 --- --- --- --- --- --- --- --- --- --- --- 16 180 29 37 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current ...
Description	HEXFET Power MOSFET
File Size	204.28K / 8 Page	View it Online	Download Datasheet

				Wisdom technologies Int`l
Part No.	WFP640
OCR Text	...m junction temperature 2. L = 1.16mh, IAS = 18A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 18A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temp...
Description	N-Channel MOSFET
File Size	854.17K / 7 Page	View it Online	Download Datasheet

				Superworld Electronics
Part No.	STRC0HTF
OCR Text	... Style 1 Electrical L : (4-3) = 16mh Min. L : (5-6) = 11H Min. L : (2-1) = 11H Min. L : (8-7) = 210H Min. STRC0HTF 2 L : (4-3) = 17mH Min. L : (5-6) = 47H Min. L : (2-1) = 47H Min. L : (8-7) = 200H Min. Conditions Test Freq. 10KHz / 50mV 10...
Description	HIGH FREQUENCY TRANSFORMER
File Size	135.67K / 2 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MC33988CPNA
OCR Text	... using single-pulse method (L = 16mh, RL = 0, VPWR = 12V, TJ = 150C). 4. ESD1 testing is performed in accordance with the Human Body Model (HBM) (CZAP = 100pF, RZAP = 1500); ESD3 testing is performed in accordance with the Charge Device Mod...
Description	Dual Intelligent High-current Self-protected Silicon High Side Switch (8.0mΩ) Dual Intelligent High-current Self-protected Silicon High Side Switch (8.0m楼?)
File Size	613.62K / 34 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SK393409 2SK3934
OCR Text	...0 V, Tch = 25C (initial), L = 8.16mh, IAR = 15 A, RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 3 1 2009-09-29 ...
Description	Switching Regulator Applications
File Size	274.64K / 6 Page	View it Online	Download Datasheet

				SemiHow Co.,Ltd.
Part No.	HFP640
OCR Text	...mum junction temperature 2. L=1.16mh, IAS=18A, VDD=50V, RG=25, Starting TJ =25C 3. ISD18A, di/dt300A/s, VDDBVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature S...
Description	200V N-Channel MOSFET
File Size	301.41K / 8 Page	View it Online	Download Datasheet

For 16mh Found Datasheets File :: 118 Search Time::1.015ms
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