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  160v 1.5a Datasheet PDF File

For 160v 1.5a Found Datasheets File :: 753    Search Time::1.171ms    
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    IRF[International Rectifier]
Part No. IRHNA57260SE JANSR2N7473U2
OCR Text ...0mA VDS > 15V, IDS = 34A A VDS= 160v ,VGS=0V VDS = 160v, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 53.5A VDS = 100V VDD = 100V...1.0MHz Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance -...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (SMD-2)

File Size 176.00K  /  8 Page

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    STMicro
Part No. BUV61 4124
OCR Text ...itter Dynamic Voltage V CC = 160v RC = 0 V CE(2s) V CC = 160v R C = 6.4 V CC = 160v R C = 6.4 1.3 1.8 0.95 1.1 3 5 2 3 V V V V V CE(4s) Pulsed: Pulse duration = 300 s, duty cycle = 2 % 2/5 BUV61 ELECTRICAL...
Description HIGH POWER NPN SILICON TRANSISTOR
From old datasheet system

File Size 74.32K  /  5 Page

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    2N6790

FAIRCHILD[Fairchild Semiconductor]
Part No. 2N6790
OCR Text ... td(ON) tr td(OFF) tf SOA VDS = 160v, ID = 125mA VDS = 5.7V, ID = 3.5A ID = 2.25A VGS 74V, RG = 50 TEST CONDITIONS ID = 0.25mA, VGS = 0V VGS = VDS, ID = 1.0mA VDS = 200V, VGS = 0V VDS = 160v, VGS = 0V TC = 125oC VGS = 20V, VDS = 0 ID = 3.5...
Description 3.5A/ 200V/ 0.800 Ohm/ N-Channel Power
3.5A 200V 0.800 Ohm N-Channel Power
3.5A, 200V, 0.800 Ohm, N-Channel Power
From old datasheet system

File Size 81.57K  /  7 Page

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    BUV39

Inchange Semiconductor Company Limited
Part No. BUV39
OCR Text ...ollector cutoff current v ce = 160v;r be = 10 v ce = 160v;r be = 10 ;t c =100 1.0 5.0 ma i cev collector cutoff current v ce = 160v;v be = -1.5v v ce = 160v;v be = -1.5v;t c =100 1.0 5.0 ma i ebo emitter cutoff current ...
Description isc Silicon NPN Power Transistor

File Size 50.21K  /  2 Page

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    STTH1002C STTH1002CB-TR STTH1002CG STTH1002CR STTH1002CT STTH1002CG-TR STTH1002CB STTH1002CFP -STTH1002C

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STTH1002C STTH1002CB-TR STTH1002CG STTH1002CR STTH1002CT STTH1002CG-TR STTH1002CB STTH1002CFP -STTH1002C
OCR Text ... dIF/dt = 100 A/s IF = 5 A VR = 160v dIF/dt = 200 A/s IF = 5 A dIF/dt = 100 A/s VFR = 1.1 x VFmax IF = 5 A dIF/dt = 100 A/s 2.4 Min. Typ. 20 5.9 Max. 25 7.6 110 Unit ns A ns V 2/8 STTH1002C Fig. 1: Peak current versus duty cycle (per...
Description 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
HIGH EFFICIENCY ULTRAFAST DIODE

File Size 108.82K  /  8 Page

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    AP9120AGH-HF AP9120AGH-HF-14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP9120AGH-HF AP9120AGH-HF-14
OCR Text ...n-source leakage current v ds =-160v, v gs =0v - - -25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate char...1.0mhz - 55 - pf r g gate resistance f=1.0mhz - 3.5 7 source-drain diode symbol parameter test cond...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

File Size 59.21K  /  4 Page

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    IRF[International Rectifier]
International Rectifier, Corp.
Part No. JANSR2N7498T2 IRHF57230SE
OCR Text ...0mA VDS > 15V, IDS = 4.5A VDS= 160v ,VGS=0V VDS = 160v, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 7.0A VDS = 100V VDD = 100V,...1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continu...
Description 200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package
RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39) 抗辐射功率MOSFET的通孔(到39

File Size 125.69K  /  8 Page

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    AP05N20GI-HF

Advanced Power Electronics Corp.
Part No. AP05N20GI-HF
OCR Text ...in-source leakage current v ds =160v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge...1.0mhz - 35 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forwa...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 55.00K  /  4 Page

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    IRF[International Rectifier]
Part No. IRF7450_04 IRF7450PBF IRF745004 IRF7450PBF-15
OCR Text ...DS = 200V, VGS = 0V A 250 VDS = 160v, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified...1.5a 39 ID = 1.5a 9.0 nC VDS = 160v 18 VGS = 10V, --- VDD = 100V --- ID = 1.5a ns --- RG = 6.0 --- V...
Description    High frequency DC-DC converters
SMPS MOSFET HEXFET Power MOSFET

File Size 173.00K  /  8 Page

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    HFB35HB20C

IRF[International Rectifier]
Part No. HFB35HB20C
OCR Text ...C See Fig. A A TJ = 125C 6 VR = 160v TJ = 25C See Fig. nC TJ = 125C 7 dif/dt = 200A/s nC TJ = 25C See Fig. A/s 8 A/s TJ = 125C Thermal - ...1.4 -- Units C/W g 2 www.irf.com HFB35HB20C 100 100 125C 10 Reverse Current - ...
Description 200V 35A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-254AA package
Ultrafast, Soft Recovery Diode

File Size 104.27K  /  5 Page

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For 160v 1.5a Found Datasheets File :: 753    Search Time::1.171ms    
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