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Infineon
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| Part No. |
SGD02N120
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| OCR Text |
...package ordering code sgp02n120 1200v 2a 0.11mj 150 c to-220ab q67040-s4270 sgb02n120 to-263ab(d2pak) q67040-s4271 sgd02n120 to-252aa(dpak)...10a 12a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0 .01a 0.1a 1a 10a dc 20ms 150... |
| Description |
IGBTs & DuoPacks - 2A 1200v TO252AA SMD IGBT
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| File Size |
399.11K /
12 Page |
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it Online |
Download Datasheet
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Beijing Tianrun High Voltage Electronic Devices Factory
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| Part No. |
UB150-SERIES
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| OCR Text |
1200v 100V-1200v
T rr s
1 2 3
AEOCA FRD IA 1A-4A U05 iIuECA U08 iIuECA
0.5
IA0.5-0.8A 100V-1000V
4
DF-S DB-S
1A
...10a GBU IA 2A-10a RBV IA 4A-6A D5SB IA 5A
QL IA 1A-50A KBPC IA 1A-35A
QT QH 19 *1/2IECA 1A-6A ... |
| Description |
Silicon Full Bridge Rectifier
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| File Size |
44.60K /
2 Page |
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it Online |
Download Datasheet |
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Infineon
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| Part No. |
SGW02N120
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| OCR Text |
...rn off safe operating area VCE 1200v, Tj 150C Gate-emitter voltage Avalanche energy, single pulse IC = 2A, VCC = 50V, RGE = 25, start at T...10a tp=10s
10a
IC, COLLECTOR CURRENT
8A
6A
TBD
TC=80C TC=110C
IC, COLLECTOR CURRE... |
| Description |
IGBTs & DuoPacks - 2A 1200v TO247AC IGBT
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| File Size |
376.51K /
11 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT1201R5SVFR APT1201R5BVFR
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| OCR Text |
1200v 10a 1.500
POWER MOS V (R)
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power ... |
| Description |
10 A, 1200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
POWER MOS V
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| File Size |
136.97K /
4 Page |
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it Online |
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Infineon
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| Part No. |
G03H1202
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| OCR Text |
...ration HighSpeed-Technology for 1200v applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel sw...10a
10a
t p =10s 20s
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
8A T C =25C T C =100... |
| Description |
High Speed 2-Technology
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| File Size |
405.50K /
10 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SGW02N120
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| OCR Text |
...rn off safe operating area VCE 1200v, Tj 150C Gate-emitter voltage Avalanche energy, single pulse IC = 2A, VCC = 50V, RGE = 25, start at T...10a
tp=10s
10a
IC, COLLECTOR CURRENT
8A
6A
TBD
TC=80C TC=110C
IC, COLLECTOR CU... |
| Description |
Fast IGBT in NPT-technology
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| File Size |
307.92K /
11 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
GB10RF120K
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| OCR Text |
...n * TOTALLY LEAD-FREE
VCES = 1200v IC = 13A @ TC=80C tsc > 10s @ TJ =150C ECONO2 PIM VCE(on) typ. = 2.68V
Benefits
* * * * * * * Benc...10a L = 1mH VGE = 15V RG = 22 V FM Diode Forward Voltage Drop 2.02 2.53 2.13 2.81 2.50 3.35 2.63 3.5... |
| Description |
IGBT PIM MODULE
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| File Size |
349.49K /
12 Page |
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it Online |
Download Datasheet |
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Price and Availability
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