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Analog Power
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| Part No. |
AM5400N
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| OCR Text |
... ds(on) (m) 100 280 @ v gs = 10v 355 @ v gs = 4.5v key features: ? low r ds(on) trench technology ? low thermal impedance ? fast switchi...ms 10 ms 100 ms 1 sec 10 sec 100 sec dc idm limit limited by rds 1 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8... |
| Description |
MOSFET
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| File Size |
356.62K /
5 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQNL1N50B FQNL1N50BBU FQNL1N50BTA
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| OCR Text |
...erse Drain Current [A]
VGS = 10v
10
-1
8
4
Note : TJ = 25
150
25
Note : 1. VGS = 0V 2. 250 s Pulse Test
0 0.0
...ms 10 ms 100 ms DC 1s
0.20
0.15
0.10
10
-2
Notes : 1. TC = 25 C 2. TJ = 150 C 3. ... |
| Description |
500V N-Channel QFET
500V N-Channel MOSFET
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| File Size |
618.81K /
8 Page |
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it Online |
Download Datasheet |
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Analog Power
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| Part No. |
AM5430N
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| OCR Text |
... r ds(on) (m) 30 22 @ v gs = 10v 30 @ v gs = 4.5v key features: ? low r ds(on) trench technology ? low thermal impedance ? fast switchin...ms 10 ms 100 ms 1 sec 10 sec 100 sec 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 vgsgatetosource voltage (v) qg... |
| Description |
MOSFET
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| File Size |
292.74K /
5 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
PSMN027-100XS
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| OCR Text |
... drain current t mb =25c; v gs =10v; see figure 1 --23.4a p tot total power dissipation t mb =25c; see figure 2 --41.1w static characteri...ms) i al (a) (1) (2) 003aag630 10 -1 1 10 10 2 10 3 1 10 10 2 10 3 v ds (v) i ... |
| Description |
N-channel 100V 26.8 m standard level MOSFET in TO220F (SOT186A)
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| File Size |
212.93K /
15 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
PSMN5R6-100XS
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| OCR Text |
... drain current t mb =25c; v gs =10v; see figure 1 --61.8a p tot total power dissipation t mb =25c; see figure 2 --60w static characterist...ms) i al (a) (1) (2) 003aag560 10 -1 1 10 10 2 10 3 10 -1 1 10 10 2 10 3 v ds ... |
| Description |
N-channel 100V 5.6 m standard level MOSFET in TO220F (SOT186A)
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| File Size |
214.41K /
15 Page |
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it Online |
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Eupec
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| Part No. |
BSM25GP120
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| OCR Text |
...verse recovery current v ge = -10v, t vj = 25c, v r = 600 v i rm - 30 - a v ge = -10v, t vj = 125c, v r = 600 v - 35 - a sperrverz?gerungsladung i f =i nenn , - di f /dt = 1000a/s recovered charge v ge... |
| Description |
TRANSISTOR
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| File Size |
323.05K /
11 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQNL2N50B FQNL2N50BTA FQNL2N50BTANL
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| OCR Text |
... Characteristics
18 10 VGS = 10v VGS = 20V 9
0
15
12
6
IDR , Reverse Drain Current [A]
RDS(on) [], Drain-Source On-Resist...ms 10 ms 100 ms 1s 10 s DC
0.30 0.25 0.20 0.15 0.10 0.05 0.00 25
10
-1
10
-2
Note... |
| Description |
500V N-Channel QFET
500V N-Channel MOSFET
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| File Size |
596.67K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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