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				ST Microelectronics
Part No.	NAND04GW3B2A
OCR Text	1056 Word Page 3V, NAND Flash Memories PRELIMINARY DATA Feature summary High density NAND Flash Memory - up to 8 Gbit memory array ...Byte 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description	NAND Flash Memories
File Size	416.42K / 58 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	NAND01G-B
OCR Text	1056 Word Page, 1.8V/3V, NAND Flash Memory Feature summary High Density NAND Flash memories - - - Up to 2 Gbit memory array Up to 64Mb...Byte/Word 4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
File Size	490.04K / 64 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	1GW3B2AN6
OCR Text	1056 Word Page, 1.8V/3V, NAND Flash Memory PRELIMINARY DATA FEATURES SUMMARY www.DataSheet4U.com ...Byte/Word 4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 A...
Description	NAND Flash Memory
File Size	583.35K / 59 Page	View it Online	Download Datasheet

				Weitrend
Part No.	WT6148 WT6160
OCR Text	... 8-bit CPU, 48K /60K bytes ROM, 1056 bytes RAM, 14 PWMs, parallel I/Os, SYNC signal processor, timer, DDC1/2B interface, master/slave I2C in...byte) and $FFFBh (high byte) : INT0 interrupt vector. $FFFCh (low byte) and $FFFDh (high byte) : pro...
Description	(WT6148 / WT6160) Digital Monitor Controller
File Size	69.62K / 5 Page	View it Online	Download Datasheet

				Holtek Semiconductor Inc. Holtek Semiconductor In...
Part No.	HT36F6
OCR Text	...8.350 167.750 67.750 -42.850 Y -1056.650 -945.550 -845.550 1156.650 1156.650 1156.650 1156.650 1156.650 1156.650 1156.650 1156.650 1156.650 ...byte of the program counter (PCL) is a readable and writeable register (06H). Moving data into the P...
Description	Music Synthesizer 8-Bit MCU Music Synthesizer 8-Bit MCU
File Size	299.01K / 37 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K9F1G08U0M-FIB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YIB0 K9F1G08U0M-YIB0 K9F1G08Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G16Q0M-YIB0 K9F1G08Q0M-YIB0 K9F1G08U0M-VCB0 K9F1G08U0M-FCB0 K9F1G08Q0M-PCB0 K9F1G08U0M-PCB0 K9F1G16Q0M-PCB0 K9F1G16U0M-PCB0 K9F1G16Q0M-PIB0 K9F1G08Q0M-PIB0 K9F1G08U0M-PIB0 K9F1G16U0M-PIB0 K9F1G08U0M-VIB0
OCR Text	...s on the 2112byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 50ns cycle time per byte. Th...
Description	DSUB DBM25PK 1Gb Gb 1.8V NAND Flash Errata 1Gb的NAND闪存千兆1.8V的勘误表 Industrial Mid-Range Soldering Iron; Power Rating:60W; Tip Temperature:850 F; Features:Incls.: One 67D 1/4" Dia., 3-3/8" L Long-Tapered Diamond-Style Paragon Soldering Tip RoHS Compliant: Yes
File Size	724.12K / 38 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K9K2G08U0M-FIB0 K9K2G08U0M-VCB0 K9K2G08U0M-VIB0 K9K2G08U0M-FCB0 K9K2G08Q0M-YIB0 K9K2G08U0M-YIB0 K9K2G16Q0M-YIB0 K9K2G16U0M-YIB0 K9K2G08Q0M-PCB0 K9K2G08U0M-PCB0 K9K2G16Q0M-PCB0 K9K2G16U0M-PCB0 K9K2G16U0M-PIB0 K9K2G16U0M-YCB0 K9K2G16Q0M-YCB0 K9K2G08U0M-PIB0 K9K2G16Q0M-PIB0 K9K2G08U0M-YCB0 K9K2G08Q0M-YCB0 K9K2G08Q0M-PIB0
OCR Text	...s on the 2112byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 50ns cycle time per byte. Th...
Description	256M x 8 Bit / 128M x 16 Bit NAND Flash Memory 256M × 8 128M的16位NAND闪存
File Size	742.51K / 38 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K9K2G16Q0M-Y K9K2G16Q0M-P K9K2G08U0M-F K9K2G08Q0M-P K9K2G08U0M-V K9XXG08UXM-P K9XXG16UXM-E K9XXG08UXM-Y K9XXG16UXM-Y
OCR Text	... on the 2112-byte(x8 device) or 1056-word(x16 device) page and an erase operation can be performed in typical 2ms on a 128k-byte(x8 device) or 64k- word(x16 device) block. data in the data page can be read out at 80ns(1.8v device) or 50n...
Description	SSR H/S IO 230V 20A 4-32VDC SSR H/S ZS 600V 70A 4-32VDC 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory 256M × 8 128M的16位NAND闪存 ULTRA2 LVD SCSI INTERNAL CBL 3 256M × 8 128M的16位NAND闪存 DSUB 25 M PCR/A G
File Size	684.25K / 39 Page	View it Online	Download Datasheet

				ATMEL Corporation
Part No.	45DB642D
OCR Text	...ge size ? 1024 bytes per page ? 1056 bytes per page ? page program operation ? intelligent programming operation ? 8192 pages (1024/1056 byt...byte security register ? 64-byte user programmable space ? unique 64-byte device identifier ? jedec ...
Description	Search --To AT45DB642D
File Size	1,040.19K / 55 Page	View it Online	Download Datasheet

				Atmel Corp.
Part No.	AT45DB1282-CI AT45DB1282-TI AT45DB1282-CC
OCR Text	...nd block erase operations two 1056-byte sram data buffers ? allows receiving of data while reprogramming the flash array continuous read capability through entire array ? ideal for code shadowing applications low-power dissipation ? ...
Description	128-megabit 2.7-volt Dual-interface DataFlash
File Size	255.85K / 35 Page	View it Online	Download Datasheet

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