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  0.82 Datasheet PDF File

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    FS7KM-14A

Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
Part No. FS7KM-14A
OCR Text 0.3 6.5 0.3 3 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 0.75 0....82 ID ............................................................................................ 7...
Description HIGH-SPEED SWITCHING USE
AML ROCKER OPERATOR COVER RED 高速开关使

File Size 43.32K  /  4 Page

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    GA50TS120U

IRF[International Rectifier]
Part No. GA50TS120U
OCR Text ...Weight of Module Typ. -- -- 0.1 -- -- 200 Max. 0.44 0.70 -- 4.0 3.0 -- Units C/W N. m g www.irf.com 1 4/24/2000 GA50TS...82 313 327 6.0 10 16 8933 397 77 141 66 4616 999 Max. Units Conditions 596 VCC = 400V 100 nC IC = 60...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 208.85K  /  10 Page

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    IDT71V632SA4PF IDT71V632SA4PFI IDT71V632 IDT71V632S5PFI IDT71V632S5PF IDT71V632S6PF IDT71V632S6PF8 IDT71V632S6PFG IDT71V

IDT[Integrated Device Technology]
Part No. IDT71V632SA4PF IDT71V632SA4PFI IDT71V632 IDT71V632S5PFI IDT71V632S5PF IDT71V632S6PF IDT71V632S6PF8 IDT71V632S6PFG IDT71V632S6PFG8 IDT71V632S6PFI IDT71V632S6PFI8 IDT71V632S5PF8 IDT71V632S5PFG IDT71V632S5PFG8 IDT71V632S5PFI8 IDT71V632S7PF IDT71V632S7PF8 IDT71V632S7PFG IDT71V632S7PFI IDT71V632S7PFI8 IDT71V632S8PF IDT71V632S8PF8
OCR Text ...ite enables. BW1 controls I/O(7:0), BW2 controls I/O(15:8), etc. Any active byte write causes all outputs to be disabled. ADSP LOW disables ...82 81 NC I/O16 I/O17 VDDQ VSSQ I/O18 I/O19 I/O20 I/O21 VSSQ VDDQ I/O22 I/O23 VDD/NC(1) VDD NC VSS...
Description 64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter/ Single Cycle Deselect
3.3V 64K x 32 Pipelined
64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect
64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter Single Cycle Deselect

File Size 271.54K  /  19 Page

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    INA-01170

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. INA-01170
OCR Text ...z dB Min. 30 Typ. 32.5 0.5 500 39 1.6:1 1.5:1 Max. 35 dB dBm dBm psec V mV/C 4.0 2.0 11 23 200 5.5 +10 2.5 7.0 N...82 -18 41.71 -26 40.41 -35 38.93 -43 37.38 -50 34.19 -65 31.13 -78 28.30 -90 23.48 -112 19.45 -132 1...
Description Low Noise, Cascadable Silicon Bipolar MMIC Amplifier
Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier

File Size 43.00K  /  3 Page

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ... 84 59 330 200 1.4 20 50 17 4.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C Thermal Resistan...82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H 2 .92 (.11 5) 2 .64 (.10 4) 3 O U T LIN E C ...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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    IRF1310N

IRF[International Rectifier]
Part No. IRF1310N
OCR Text ... VDSS = 100V G S RDS(on) = 0.036 ID = 42A Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces...82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H 2 .92 (.11 5) 2 .64 (.10 4) 3 O U T LIN E C ...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A)
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 92.91K  /  8 Page

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    IRF1310S

IRF[International Rectifier]
Part No. IRF1310S
OCR Text ...ation. VDSS = 100V RDS(on) = 0.04 ID = 41A SMD-220 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 2...82 64 4.5 7.5 --- 2500 --- 630 --- 130 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C...
Description Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

File Size 319.11K  /  8 Page

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    IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text ...nt)** Typ. --- --- Max. 0.65 40 Units C/W www.irf.com 1 02/14/02 IRF2807S/IRF2807L Electrical Characteristics @ TJ = ...82 showing the A G integral reverse --- --- 280 S p-n junction diode. --- --- 1.2 V TJ = 25C, IS = 4...
Description HEXFET Power MOSFET HEXFET功率MOSFET
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package

File Size 122.50K  /  10 Page

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    IRF2807

International Rectifier
Part No. IRF2807
OCR Text ...unction-to-Ambient Typ. --- 0.50 --- Max. 0.65 --- 62 Units C/W www.irf.com 1 3/16/01 IRF2807 Electrical Characterist...82 showing the A G integral reverse --- --- 280 S p-n junction diode. --- --- 1.2 V TJ = 25C, IS = 4...
Description Power MOSFET(Vdss=75V, Id=82A?)
Power MOSFET(Vdss=75V, Id=82A)

File Size 149.88K  /  8 Page

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    IRF3315

International Rectifier
Part No. IRF3315
OCR Text ... VDSS = 150V G S RDS(on) = 0.07 ID = 27A Description Fifth Generation HEXFETs from International Rectifier utilize advanced process...82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H 2 .92 (.11 5) 2 .64 (.10 4) 3 O U T LIN E C ...
Description Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)

File Size 121.12K  /  8 Page

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