| |
|
 |
TRIQUINT[TriQuint Semiconductor] TriQuint Semiconductor,Inc.
|
| Part No. |
TGP6336 TGP6336-EEU
|
| OCR Text |
...ical Output SWR 3.556 x 2.540 x 0.1016 mm (0.140 x 0.100 x 0.004 in.)
Description
The TriQuint TGP6336-EEU is a GaAs MMIC 5-bit phase sh...45...................................... 0 V to V+ Operating Channel temperature, TCH *................ |
| Description |
6 - 18 GHz Phase Shifter
|
| File Size |
470.29K /
7 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
INFINEON[Infineon Technologies AG]
|
| Part No. |
BFP181R
|
| OCR Text |
0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz
Junction temperature Ambient temperature Storage temperature
Thermal Resistance Junction - soldering point 2) RthJS
1T is measured on the collector lead at the soldering point to th... |
| Description |
NPN Silicon RF Transistor
|
| File Size |
86.78K /
7 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
INFINEON[Infineon Technologies AG]
|
| Part No. |
BFP181W
|
| OCR Text |
0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz
3 4
Junction temperature Ambient temperature Storage temperature
Thermal Resistance Junction - soldering point RthJS
1T is measured on the collector lead at the soldering point t... |
| Description |
NPN Silicon RF Transistor
|
| File Size |
115.40K /
7 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
INFINEON[Infineon Technologies AG]
|
| Part No. |
BFR183T
|
| OCR Text |
...eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emit...45
dB
Power Gain |S21|2= f(f)
V CE = Parameter
35
IC=15mA
dBm
IC =15mA
35 30
25
... |
| Description |
NPN Silicon RF Transistor
|
| File Size |
79.60K /
7 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
INFINEON[Infineon Technologies AG]
|
| Part No. |
BFR183W
|
| OCR Text |
...eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emit...45
VCB
IC
Power Gain Gma , Gms = f(IC )
f = 0.9GHz VCE = Parameter
20 dB
Power Gain Gm... |
| Description |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers
|
| File Size |
78.50K /
7 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|