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  0.45-6ghz Datasheet PDF File

For 0.45-6ghz Found Datasheets File :: 509    Search Time::1.5ms    
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    HIROSE ELECTRIC Co., Ltd.
Hirose Electric USA, INC.
Part No. MMCX-J-178B_U MMCX-LP-178B_U MMCX-LR-178B_U MMCX-P-178B_U MMCX-R-178B_U MMCX-LR-316_U MMCX-J-316_U MMCX-J-FHSB MMCX-J-PC MMCX-J-SMT MMCX-LP-316_U MMCX-LP-FHSB MMCX-LP-PC MMCX-LP-SMT MMCX-LR-FHSB MMCX-LR-PC MMCX-LR-SMT MMCX-P-316_U MMCX-P-FHSB MMCX-P-PC MMCX-P-SMT MMCX-R-316_U MMCX-R-FHSB MMCX-R-PC MMCX-R-SMT MMCX-J-316/U MMCX-R-316/U MMCX-R-178B/U MMCX-P-316/U MMCX-P-178B/U MMCX-J-178B/U MMCX-LP-178B/U MMCX-LP-316/U MMCX-LR-178B/U MMCX-LR-316/U
OCR Text ...CB surface, the connector has a 0.36mm offset from the card centerline, which allows the card center axis to coincide with the connector cen...45 O4.47 3.4 0.36 Part Number MMCX-LR-SMT CL No. 339-0003-2 Packaging 50 pcs PER c...
Description Precise tone detector 超微型单元的同轴连接器(PC卡类挂墙
Special Information Tone Detector 超微型单元的同轴连接器(PC卡类挂墙
Inductor; Inductor Type:Power; Inductance:100uH; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No; Reel Quantity:250 RoHS Compliant: Yes 超微型单元的同轴连接器(PC卡类挂墙
Ultra Miniature Snap-on Coaxial Connector (PC Card Type 2 Mountable) 超微型单元的同轴连接器(PC卡类挂墙
Tone detector for special-purpose use in automatic following of switched telephone calls

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    TRIQUINT[TriQuint Semiconductor]
TriQuint Semiconductor,Inc.
Part No. TGP6336 TGP6336-EEU
OCR Text ...ical Output SWR 3.556 x 2.540 x 0.1016 mm (0.140 x 0.100 x 0.004 in.) Description The TriQuint TGP6336-EEU is a GaAs MMIC 5-bit phase sh...45...................................... 0 V to V+ Operating Channel temperature, TCH *................
Description 6 - 18 GHz Phase Shifter

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    FLM8596-4F

List of Unclassifed Manufacturers
ETC
Electronic Theatre Controls, Inc.
Part No. FLM8596-4F
OCR Text ...= 25C Condition Rating 15 -5 25.0 -65 to +175 175 Unit V V W C C Fujitsu recommends the following conditions for the reliable operation o...45 5.0 0.6 6.0 80 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level Edition 1.1 Aug...
Description X, Ku-Band Internally Matched FET

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    INFINEON[Infineon Technologies AG]
Part No. BFP181R
OCR Text 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 2) RthJS 1T is measured on the collector lead at the soldering point to th...
Description NPN Silicon RF Transistor

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    INFINEON[Infineon Technologies AG]
Part No. BFP181W
OCR Text 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz 3 4 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS 1T is measured on the collector lead at the soldering point t...
Description NPN Silicon RF Transistor

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    ARE1303 ARE1303Z ARE1306 ARE1309 ARE1312 ARE1312Z ARE1324 ARE134H ARE13A03Z ARE13A06 ARE13A06Z ARE13A09 ARE13A09Z ARE13A

Matsushita Electric Works(Nais)
NAIS[Nais(Matsushita Electric Works)]
Part No. ARE1303 ARE1303Z ARE1306 ARE1309 ARE1312 ARE1312Z ARE1324 ARE134H ARE13A03Z ARE13A06 ARE13A06Z ARE13A09 ARE13A09Z ARE13A12 ARE13A12Z ARE13A24Z ARE13A4H ARE13A4HZ ARE1309Z ARE1324Z ARE13A24 ARE134HZ ARE13A03 ARE1306Z
OCR Text ...lation (dB, Min.) 900MHz 1.2 0.2 60 2.6GHz 1.5 0.5 30 SPECIFICATIONS Contact Arrangement Contact material Initial contact resista...45 0.6 0.9 1.2 2.4 Coil resistance, (10%) 45 101 180 405 720 2,880 Nominal operating current, mA (1...
Description RE-relay. 2.6 GHz 75 ohm relays for broadcasting industry. Standard PC board terminal. Nominal voltage 4.5 V DC.
2.6 GHZ 75з RELAYS FOR BROADCASTING INDUSTRY
2.6 GHz 75 RELAYS FOR BROADCASTING INDUSTRY
2.6 GHz 75?/a> RELAYS FOR BROADCASTING INDUSTRY

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    BFP182R

Infineon Technologies AG
Part No. BFP182R
OCR Text ...eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emit...45 dB GHz pF typ. 8 0.27 0.27 0.6 fT Ccb Cce Ceb F 6 - Gms - 1.2 1.9 21.5 - Gma...
Description NPN Silicon RF Transistor
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA

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    BFP182W

Infineon Technologies AG
Part No. BFP182W
OCR Text ...eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emit...45 dB GHz pF typ. 8 0.3 0.27 0.6 fT Ccb Cce Ceb F 6 - Gms - 1.2 1.9 21.5 - Gma ...
Description RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA

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    INFINEON[Infineon Technologies AG]
Part No. BFR183T
OCR Text ...eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emit...45 dB Power Gain |S21|2= f(f) V CE = Parameter 35 IC=15mA dBm IC =15mA 35 30 25 ...
Description NPN Silicon RF Transistor

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    INFINEON[Infineon Technologies AG]
Part No. BFR183W
OCR Text ...eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emit...45 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 20 dB Power Gain Gm...
Description RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers

File Size 78.50K  /  7 Page

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