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CYPRESS SEMICONDUCTOR CORP
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| Part No. |
MT57W1MH18BF-5 MT57W1MH18BF-3.3
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| OCR Text |
...ered writes core v dd = 1.8v (0.1v); i/o v dd q = 1.5v to v dd (0.1v) hstl clock-stop capability with s restart 13mm x 15mm, 1mm...18 mt57w1mh18b 512k x 36 mt57w512h36b package 165-ball, 13mm x 15mm fbga f operating temperature... |
| Description |
1M X 18 DDR SRAM, 0.45 ns, PBGA165
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| File Size |
372.38K /
27 Page |
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Micron Technology, Inc.
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| Part No. |
MT55L64L32P1 MT55L128L18P
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| OCR Text |
...memory array e e input register 0 address register 0 write address register 1 write address register 2 write registry and data coherency con...18 18 18 18 k mode 16 bwa# bwb# bwc# bwd# r/w# ce# ce2 ce2# oe# read logic dqpa dqpb dqpc dqpd d a t... |
| Description |
64K x 32,3.3V I/O, ZBT SRAM( 2Mb,3.3V输入/输出，静态RAM)
128K x 18, 3.3V I/O, ZBT SRAM(2Mb,3.3V输入/输出，静态RAM) 128K的18.3V的I / O的ZBT SRAM的（处理器，3.3V的输输出，静态内存）
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| File Size |
396.14K /
23 Page |
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it Online |
Download Datasheet |
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Micron Technology, Inc.
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| Part No. |
MT55L128L32P1 MT55L256V18P1 MT55L256L18P1 MT55L128L36P1 MT55L128V32P1
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| OCR Text |
...# read logic e address register 0 write address register 1 write address register 2 write registry and data coherency control logic 18 18 16 18 burst logic sa0' sa1' d1 d0 q1 q0 sa0 sa1 k 18 adv/ld# adv/ld# clk cke# dqpa dqpb 36 36 36 36 in... |
| Description |
3.3V I/O28K x 32，Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器)
2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器)
3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18，流量通过ZBT SRAM的电压（3.3V输入/输出Mb的流通式同步静态存储器
3.3V I/O28K x 36，Flow-Through ZBT SRAM(3.3V或输输出,4Mb流通式同步静态存储器) 3.3V的I / O28K的36，流量通过ZBT SRAM的电压（3.3V或输输出Mb的流通式同步静态存储器
2.5V I/O28K x 32，Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 2.5VI / O28K的32，流量通过ZBT SRAM的电压（2.5V输入/输出Mb的流通式同步静态存储器
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| File Size |
426.03K /
25 Page |
View
it Online |
Download Datasheet |
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