0.17-0.25v pdf Datasheet P6 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : 65XQD ACU7515 XLC30A9 U021003 ADG507 16373 ACS781 LA6515
	Product Description
	Full Text Search

0.17-0.25v Datasheet PDF File

For 0.17-0.25v Found Datasheets File :: 18797 Search Time::2.891ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				International Rectifier
Part No.	IRF1404
OCR Text	... VDSS = 40V G S RDS(on) = 0.004 ID = 162A Description Seventh Generation HEXFET(R) Power MOSFETs from International Rectifier util...17 --- VDD = 20V 140 --- ID = 95A ns 72 --- RG = 2.5 26 --- RD = 0.21 D Between lead, 4.5 --- 6mm (...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A)
File Size	105.33K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1902 IRF1B902 IRF1902TR
OCR Text	... Max. 20 4.2 3.4 17 2.5 1.6 0.02 12 -55 to + 150 Units V A W mW/C V C Thermal Resistance Symbol RJL RJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. --- --- Max. 20 50 Units C/W www.irf.com ...
Description	20V Single N-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=20V)
File Size	105.83K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF2204
OCR Text	...unction-to-Ambient Typ. --- 0.50 --- Max. 0.45 --- 62 Units C/W www.irf.com 1 08/07/02 IRF2204 Electrical Characteris...17. For N-channel HEXFET(R) power MOSFETs 8 www.irf.com IRF2204 TO-220AB Package Outline ...
Description	40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AUTOMOTIVE MOSFET
File Size	138.67K / 9 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	0.45 and 0.68 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. T...17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature 2.9 - 0.32 0....
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF244 IRF245 IRF246 IRF247
OCR Text	0.28 and 0.34 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. T...17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature 6.7 - 0.20 0....
Description	14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs
File Size	70.04K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2804S-7P
OCR Text	... j Parameter Typ. --- 0.50 Max. 0.50 --- 62 40 Units C/W Case-to-Sink, Flat, Greased Surface Junction-to-Ambient j ...17 150 110 105 4.5 7.5 6930 1750 970 5740 1570 2340 --- --- 1.6 4.0 --- 20 250 200 -200 260 --- --- ...
Description	AUTOMOTIVE MOSFET
File Size	260.32K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF2907Z IRF2907ZL IRF2907ZS IRF2907S IRF2B907Z IRF2B907ZL IRF2B907ZS
OCR Text	... k Parameter Typ. --- 0.50 --- --- Max. 0.45 --- 62 40 Units C/W Case-to-Sink, Flat, Greased Surface Junction-to-Ambien...17/04 IRF2907Z/S/L Static @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS VDSS/TJ R...
Description	AUTOMOTIVE MOSFET 汽车MOSFET 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
File Size	359.66K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3000
OCR Text	0.40W@VGS = 10V VDSS 300V ID 1.6A l Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capac...17 VGS = 10V, --- VDD = 150V --- ID = 0.96A ns --- RG = 2.2 --- VGS = 10V --- VGS = 0V --- VDS = 25...
Description	300V Single N-Channel HEXFET Power MOSFET in a SO-8 package SMPS MOSFET
File Size	119.33K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3315S IRF3315L
OCR Text	... VDSS = 150V G S RDS(on) = 0.082 ID = 21A Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces...17 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.187 --- --- --- --- --- --...
Description	Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A) Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)
File Size	193.12K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3415L IRF3415S
OCR Text	...d D VDSS = 150V RDS(on) = 0.042 G ID = 43A S Description Fifth Generation HEXFETs from International Rectifier utilize adva...17 --- --- --- --- --- --- --- --- --- --- 12 55 71 69 7.5 2400 640 340 Max. Units Conditions --- V ...
Description	Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A) Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)
File Size	152.65K / 10 Page	View it Online	Download Datasheet

For 0.17-0.25v Found Datasheets File :: 18797 Search Time::2.891ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |