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  .4v Datasheet PDF File

For .4v Found Datasheets File :: 63387    Search Time::1.703ms    
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    2SD1023

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1023
OCR Text ... B1 I= R= 10 L Fall Time tf V = 4V Max 5 BB2 2SD1023 hFE - I C VCE = 3V Pulse width = 300s 10000 50C 100C Tc = 150C DC Current Gain hFE 1000 25C 0C -25C -55C 1 8 100 0.1 Collector Current IC [A] ...
Description Darlington Transistor(5A NPN)

File Size 290.46K  /  9 Page

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    2SD1024

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1024
OCR Text ...Es B1 I R= 3 L Fall Time tf V = 4V Max 3 BB2 2SD1024 hFE - I C 10000 50C 100C Tc = 150C DC Current Gain hFE 1000 25C VCE = 3V Pulse width = 300s 1 10 12 0C -25C -55C 100 0.1 Collector Current IC [A...
Description Darlington Transistor(8A NPN)

File Size 275.54K  /  8 Page

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    2SD1025

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1025
OCR Text ...Es B1 I R= 5 L Fall Time tf V = 4V Max 5 BB2 2SD1025 hFE - I C VCE = 3V Pulse width = 300s 10000 50C 100C Tc = 150C DC Current Gain hFE 1000 25C 0C -25C 1 10 12 100 -55C 0.1 Collector Current IC [A] ...
Description Darlington Transistor(8A NPN)

File Size 343.47K  /  8 Page

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    2SD1026

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1026
OCR Text ... IB1 = IB2 = 20mA RL = 2 VBB2 = 4V VCE(sat) VBE(sat) jc fT ton ts tf V V /W MHz s Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SD1026 hFE - I C 10000 50C 100C Tc = 150C DC Current Gain hFE 1000 25C 0C...
Description Darlington Transistor(15A NPN)

File Size 405.96K  /  8 Page

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    2SD1027

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1027
OCR Text ... IB1 = IB2 = 30mA RL = 3 VBB2 = 4V VCE(sat) VBE(sat) jc fT ton ts tf V V /W MHz s Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SD1027 hFE - I C VCE = 3V 10000 50C 100C Tc = 150C DC Current Gain hFE 1...
Description Darlington Transistor(15A NPN)

File Size 456.51K  /  10 Page

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    2N3237

Savantic, Inc.
Part No. 2N3237
OCR Text ...er on voltage i c =10a ; v ce =4v 2.2 v i ceo collector cut-off current v ce =45v; i b =0 1.0 ma i cbo collector cut-off current v cb =90v; i e =0 0.1 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma h fe-1 ...
Description Silicon NPN Power Transistors

File Size 104.74K  /  3 Page

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    2N3237

Inchange Semiconductor Company Limited
Part No. 2N3237
OCR Text ...er on voltage i c =10a ; v ce =4v 2.2 v i ceo collector cut-off current v ce =45v; i b =0 1.0 ma i cbo collector cut-off current v cb =90v; i e =0 0.1 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma h fe-1 ...
Description Silicon NPN Power Transistors

File Size 126.36K  /  3 Page

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    MAXIM INTEGRATED PRODUCTS INC
Part No. MAX4996ETG
OCR Text ...cc (note 5) 0.2 0.5 v cc = 4v , v c om _ = 0, 4v ; v n o _ , v n c _ = 4v , 0 -250 +250 na off-leakage current i com _ (off) v cc = 5.5v , v c om _ = 5.5v ; v n o , v n c w i th 50? sink cur r ent t...
Description TRIPLE 2-CHANNEL, DBL POLE DBL THROW SWITCH, QCC24

File Size 191.44K  /  13 Page

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    BF1218

NXP Semiconductors
Part No. BF1218
OCR Text ...shold voltage v ds =5v; v g2-s =4v; i d =100 ? a 0.3 - 1.0 v v g2-s(th) gate2-source threshold voltage v ds =5v; v g1-s =5v; i d =100 ? a 0.4 - 1.0 v i ds drain-source current v g2-s =4v; v ds(b) =5v; r g1 =86k ? amplifier a; v ds(a) =5v [1...
Description Dual N-channel dual-gate MOSFET

File Size 290.41K  /  23 Page

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    BD8649EFV-E2

Rohm
Part No. BD8649EFV-E2
OCR Text ...rotection operation >v enh >1.4v(typ) v lvp effective on v lvp off <1.4v(typ) - invalidity off <v enl - - invalidity off low voltage protection function is available when ss terminal vo ltage becomes mor...
Description Flexible Step-down Switching Regulator with Built-in Power MOSFET

File Size 383.88K  /  14 Page

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