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Cystech Electonics Corp...
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| Part No. |
MTB40P06AV8-0-T6-G
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| OCR Text |
...=25c, tj=150, v gs =-10v r ja =50c/w, single pulse 10ms 100ms gate charge characteristics 0 2 4 6 8 10 0 4 8 12 16 20 24 28 qg, total gate charge(nc) -v gs , gate-source voltage(v) v ds =-48v i d =-5a v ds =-30v v ds =-12v forward transfer... |
| Description |
P-Channel Enhancement Mode MOSFET
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| File Size |
394.17K /
9 Page |
View
it Online |
Download Datasheet
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Cystech Electonics Corp...
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| Part No. |
MTA7D0N01AV8-0-T6-G
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| OCR Text |
...=25c, tj=150c, v gs =10 v r ja =50c/w, single pulse maximum drain current vs junction temperature 0 2 4 6 8 10 12 14 25 50 75 100 125 150 175 tj, junctione temperature(c) i d , maximum drain current(a) t a =25c, v gs =10v, r ja =50c/w singl... |
| Description |
N-Channel Logic Level Enhancement Mode Power MOSFET
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| File Size |
360.38K /
9 Page |
View
it Online |
Download Datasheet
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Price and Availability
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