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SamHop Microelectronics...
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| Part No. |
SP8009
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| OCR Text |
24a 7.2 @ vgs=6v 6.0 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. n-channel enhancement mode field effect transistor ver 1.1 www.samhop.com.tw jul,18,2013 1 details are ... |
| Description |
Super high dense cell design for low RDS(ON). N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
77.42K /
6 Page |
View
it Online |
Download Datasheet
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SamHop Microelectronics
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| Part No. |
SP8009E
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| OCR Text |
24a 6.5 @ vgs=6v 5.0 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. n-channel enhancement mode field effect transistor ver 1.5 www.samhop.com.tw oct,22,2013 1 details are ... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
111.79K /
8 Page |
View
it Online |
Download Datasheet
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SamHop Microelectronics
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| Part No. |
SP8009EL
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| OCR Text |
24a 6.5 @ vgs=6v 5.0 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. n-channel enhancement mode field effect transistor ver 1.0 www.samhop.com.tw aug,07,2013 1 details are ... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
110.84K /
8 Page |
View
it Online |
Download Datasheet
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SEMELAB LTD
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| Part No. |
IRFN5210
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| OCR Text |
...us drain current t c = 100c -24a i dm pulsed drain current (1) -120a p d total power dissipation at t c = 25c 150w derate above 25c 1.0w/c e as single pulse avalanche energy (2) 780mj dv/dt peak diode recovery ... |
| Description |
34 A, 100 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-276AB
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| File Size |
452.99K /
3 Page |
View
it Online |
Download Datasheet
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Price and Availability
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