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TY Semiconductor Co., Ltd
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| Part No. |
2SA1900
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| OCR Text |
voltae bv cbo i c = -50a -60 v collector-emitter breakdown voltage bv ceo i c = -1ma -50 v emitter-base breakdown voltage bv ebo i e = -50a -5 v collector cutoff current i cbo v cb = -40v -0.1 a emitter cutoff current i ebo v eb =-4v -0.1 a... |
| Description |
Low saturation voltage, typically VCE(sat) = 0.15V at IC /IB = 500mA / 50mA
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| File Size |
81.49K /
1 Page |
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TY Semiconductor Co., Ltd
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| Part No. |
2SA1797
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| OCR Text |
... -50 v collector-base breakdown voltae bv cbo i c =-50 a -50 v emitter-base breakdown voltage bv ebo i e =-50 a -6 v collector cutoff current i cbo v cb = -50v -0.1 a emitter cutoff current i ebo v eb =-5v -0.1 a collector-emitter saturatio... |
| Description |
Low saturation voltage. VCE(sat)=-0.35V(Max.) at IC / IB=-1A/-50mA.
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| File Size |
57.38K /
1 Page |
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it Online |
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TY Semiconductor Co., Ltd
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| Part No. |
2SB1424
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| OCR Text |
...x unit collector-base breakdown voltae v cbo i c = -50a -20 v collector-emitter breakdown voltage v ceo i c = -1ma -20 v emitter-base breakdown voltage v ebo i e = -50a -6 v collector cutoff current ic bo v cb = -20v -0.1 a emitter cutoff c... |
| Description |
Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics.
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| File Size |
74.05K /
1 Page |
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it Online |
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New Jersey Semi-Conductor Products, Inc.
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| Part No. |
MTM25N10
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| OCR Text |
...m 100 volts rating drain-source voltae drain-gate voltage irqs " 1 mn) gate-source voltage continuous non-repetitive (tp ?. 50 us) drain current ? continuous ? pulsed total power dissipation @ tc = 25c derate above 25c operating and storage... |
| Description |
Power Field Effect Transistor
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| File Size |
86.87K /
2 Page |
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it Online |
Download Datasheet |
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