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ADPOW[Advanced Power Technology]
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| Part No. |
APT10045JLL_03 APT10045JLL APT10045JLL03
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| OCR Text |
...iode Recovery
dv/ dt 5
Q
v/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP ...500v
IDR, REvERSE DRAIN CURRENT (AMPERES)
TJ =+150C TJ =+25C 10
8
vDS=800v
4
50 10... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
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| File Size |
91.05K /
5 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STD3NM50 STD3NM50-1
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| OCR Text |
...ted by safe operating area type v dss r ds(on) i d std3nm50 std3nm50-1 500v 500v < 3 w < 3 w 3 a 3 a symbol parameter value unit v ds drain-source voltage (v gs = 0) 500 v v dgr drain-gate voltage (r gs = 20 k w ) 500 v v gs gate- sourc... |
| Description |
N-CHANNEL 500v - 2.5 OHM - 3A DPAK/IPAK ZENER-PROTECTED MDMESH POWER MOSFET
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| File Size |
475.52K /
10 Page |
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it Online |
Download Datasheet |
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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
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| Part No. |
APT10045JFLL_03 APT10045JFLL APT10045JFLL03
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| OCR Text |
...HARACTERISTICS
UNIT Amps volts v/ns ns
23 92 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (vGS =...500v
IDR, REvERSE DRAIN CURRENT (AMPERES)
vGS, GATE-TO-SOURCE vOLTAGE (vOLTS)
TJ =+150C TJ ... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
91.20K /
5 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
SD2922
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| OCR Text |
...RATINGS (Tcase = 25 oC)
Symbol v (BR)DSS v DGR v GS ID P DI SS Tj T STG Parameter Drain Source voltage Drain-Gate voltage (R GS = 1M) Gate-...500v Surface Mount Ceramic Chip Capacitor 0.01 F/ 500v Surface Mount Ceramic Chip Capacitor 0.01 F /... |
| Description |
RF POWER TRANSISTORS HF/vHF/UHF N-CHANNEL MOSFETs
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| File Size |
206.96K /
13 Page |
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it Online |
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Advanced Power Technology, Ltd.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
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| Part No. |
APT1003RSLL APT1003RBLL
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| OCR Text |
...iode Recovery
dv/ dt 5
Q
v/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP ...500v
vDS= 800v
10
4
10 15 20 25 30 35 40 45 50 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GAT... |
| Description |
POWER MOS 7 MOSFET MOSFET的功率MOS 7
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| File Size |
99.14K /
5 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT10035LLL APT10035B2LL APT10035B2LL_03 APT10035B2LL03
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| OCR Text |
...eak Diode Recovery
dv/ dt 5
v/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP ...500v
TJ =+150C TJ =+25C 10
8
vDS=800v
4
50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC)... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
90.00K /
5 Page |
View
it Online |
Download Datasheet |
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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
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| Part No. |
APT10035LFLL APT10035B2FLL APT10035B2FLL_03 APT10035B2FLL03
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| OCR Text |
...HARACTERISTICS
UNIT Amps volts v/ns ns
28 112 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (vGS ...500v
TJ =+150C TJ =+25C 10
8
vDS=800v
4
50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC)... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
88.90K /
5 Page |
View
it Online |
Download Datasheet |
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