| |
|
 |
INTERSIL[Intersil Corporation]
|
| Part No. |
RFF60P06
|
| OCR Text |
...VOLTAGE (V)
-10
FIGURE 6. unclamped INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
IDS(ON), DRAIN TO SOURCE CURRENT (A)
-150 -125 -100 -75 -50 -25 0 0
2.5 150oC NORMALIZED DRAIN TO SOURCE ON RESISTANCE VDD = -15V... |
| Description |
25A? 60V, 0.030 Ohm, P-Channel Power MOSFET
25A⒂, 60V, 0.030 Ohm, P-Channel Power MOSFET
25A/ 60V/ 0.030 Ohm/ P-Channel Power MOSFET
|
| File Size |
88.23K /
8 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
RFD16N05LSM RFD16N05L RFD16N05LSM9A
|
| OCR Text |
...AFE OPERATING AREA
FIGURE 4. unclamped INDUCTIVE SWITCHING SOA (SINGLE PULSE UIS SOA)
45 IDS, DRAIN TO SOURCE CURRENT (A) VGS = 10V VGS = 4V VGS = 5V 30
IDS(ON), DRAIN TO SOURCE ON CURRENT (A)
TC = 25oC PULSE DURATION = 80s DUTY... |
| Description |
16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
|
| File Size |
126.45K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
RFD14N05SM9A RFD14N05 RFD14N05SM
|
| OCR Text |
...es AN9321 and AN9322. FIGURE 6. unclamped INDUCTIVE SWITCHING FIGURE 7. SATURATION CHARACTERISTICS
IDS(ON), DRAIN TO SOURCE CURRENT (A)
35 30 25 20 15 10 5 0 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 NORMALIZED DRAIN TO SOURCE BREA... |
| Description |
14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs
|
| File Size |
165.05K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
RF3S49092SM F3S49092
|
| OCR Text |
...ON CHARACTERISTICS
FIGURE 6. unclamped INDUCTIVE SWITCHING CAPABILITY
(c)2004 Fairchild Semiconductor Corporation
RF3S49092SM Rev. C
RF3S49092SM Typical Performance Curves (N-Channel)
50 25oC VDD = 6V rDS(ON), DRAIN TO SOURCE O... |
| Description |
20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET
|
| File Size |
382.05K /
14 Page |
View
it Online |
Download Datasheet |
| |
|
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| Part No. |
RF1K4922396 RF1K49223
|
| OCR Text |
...es AN9321 and AN9322. FIGURE 6. unclamped INDUCTIVE SWITCHING CAPABILITY
500 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX -16 -55oC 25oC VDD = -15V rDS(ON), DRAIN TO SOURCE ON RESISTANCE (m) 150oC 400 ID = -5.0A ID = -2.5A 300 ID = -1.25A 20... |
| Description |
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET?/a> Power MOSFET
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET Power MOSFET
2.5A, -30V, 0.150 Ohm, Dual P-Channel LittleFET PowerMOSFET
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFETPower MOSFET
|
| File Size |
232.95K /
9 Page |
View
it Online |
Download Datasheet |
| |
|
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| Part No. |
RF1K49156
|
| OCR Text |
...es AN9321 and AN9322. FIGURE 6. unclamped INDUCTIVE SWITCHING CAPABILITY FIGURE 7. SATURATION CHARACTERISTICS
50 ID(ON), ON-STATE DRAIN CURRENT (A) -55oC 40
150oC
rDS(ON), ON-STATE RESISTANCE (m)
25oC
VDD = 15V
250 ID = 15... |
| Description |
6.3A, 30V, 0.030 Ohm, Logic Level, Single N-Channel LittleFET Power MOSFET
874271042
|
| File Size |
220.25K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| Part No. |
RF1K49154
|
| OCR Text |
...es AN9321 and AN9322. FIGURE 6. unclamped INDUCTIVE SWITCHING CAPABILITY FIGURE 7. SATURATION CHARACTERISTICS
20 ID(ON), ON-STATE DRAIN CURRENT (A) VDD = 15V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX -55oC 150oC
rDS(ON), ON-STATE RES... |
| Description |
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET?Power MOSFET
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET⑩ Power MOSFET
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFETPower MOSFET
|
| File Size |
285.99K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| Part No. |
PSMN008-75P PSMN008-75B
|
| OCR Text |
...ode
Avalanche ruggedness EAS unclamped inductive load; ID = 75 A; tp = 0.1 ms; VDD 15 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 C; Figure 4 unclamped inductive load; VDD 15 V; RGS = 50 ; VGS = 10 V; Figure 4 - 360 mJ
IAS
non-rep... |
| Description |
N-channel enhancement mode field-effect transistor 75 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
| File Size |
127.13K /
14 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
