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  tesm Datasheet PDF File

For tesm Found Datasheets File :: 52    Search Time::0.828ms    
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    MT3S16T

Toshiba Semiconductor
Part No. MT3S16T
OCR Text ...~125 Unit V V V mA mW mW C C tesm JEDEC 1.Base 2.Emitter 3.Collector JEITA Note: Using continuously under heavy loads (e.g. the application of TOSHIBA 2-1B1A high temperature/current/voltage and the significant change in temperat...
Description VHF~UHF Band Oscillator and Amplifier Applications

File Size 127.29K  /  3 Page

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    MT3S37T

Toshiba Semiconductor
Part No. MT3S37T
OCR Text ...2GHz) Marking 3 Q4 1 2 tesm JEDEC JEITA Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Rang...
Description UHF LOW NOISE AMPLIFIER APPLICATION

File Size 121.46K  /  4 Page

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    MT8986AE MT8986AP MT8986AP1 MT8986APR MT8986APR1 MT8986AL MT3S35T

Toshiba Semiconductor
Part No. MT8986AE MT8986AP MT8986AP1 MT8986APR MT8986APR1 MT8986AL MT3S35T
OCR Text ... 2 Marking 3 Q2 1 2 tesm JEDEC 2-1B1A Maximum Ratings (Ta = 25C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction tem...
Description TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION
CMOS ST-BUS FAMILY MULTIPLE RATE DIGITAL SWITCH

File Size 116.03K  /  4 Page

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    Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. RN2112FT RN2113FT
OCR Text ... of devices housed in very thin tesm packages. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. Wide range of resisto...
Description IGBT Modules up to 600V Dual; Package: PG-LQFP-64; Max Clock Frequency: 40.0 MHz; SRAM (incl. Cache): 8.0 KByte; CAN Nodes: 2; A / D input lines
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

File Size 72.56K  /  3 Page

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    TOSHIBA
Part No. RN2103FT RN2101FT RN2102FT
OCR Text ...of devices housed in very thin tesm packages. incorporating a bias resistor into a transistor reduces parts count. reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. wide range ...
Description Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.

File Size 80.58K  /  4 Page

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    TOSHIBA
Part No. RN1101FT RN1105FT
OCR Text ...of devices housed in very thin tesm packages. incorporating a bias resistor into a transistor reduces parts count. reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. wide range ...
Description Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.

File Size 80.92K  /  4 Page

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    TOSHIBA
Part No. RN1111FT
OCR Text ...of devices housed in very thin tesm packages. incorporating a bias resistor into a transistor reduces parts count. reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. wide range ...
Description Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.

File Size 102.54K  /  3 Page

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    TOSHIBA
Part No. RN2111FT
OCR Text ...of devices housed in very thin tesm packages. incorporating a bias resistor into a transistor reduces parts count. reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. wide range ...
Description Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.

File Size 72.53K  /  3 Page

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    TOSHIBA
Part No. MT3S31T
OCR Text ...deg. p3 3 12 1. base 2. emitter tesm 3. collector jedec - eiaj - toshiba 2-1b1a 1.4 0.05 0.59 0.0 5 0.14 0.0 5 0.8 0.05 0.32 0.0 5 0.22 0.0 5 0.9 0.1 0.4 5 0.4 5 1.2 0.05 unit in mm -toshiba is continually working to improve the ...
Description RF Bipolar Transistors

File Size 146.81K  /  3 Page

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    MT3S11T

Toshiba Semiconductor
Part No. MT3S11T
OCR Text ...~125 Unit V V V mA mW mW C C tesm JEDEC JEITA TOSHIBA 1.Base 2.Emitter 3.Collector 2-1B1A Weight: 0.0022g (typ.) Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature...
Description VHF~UHF Band Low-Noise Amplifier Applications

File Size 127.15K  /  3 Page

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For tesm Found Datasheets File :: 52    Search Time::0.828ms    
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