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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TTC5886A
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| Description |
NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TTC5810
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| Description |
NPN Bipolar Transistor / VCEO=50 V / IC=1 A / hFE=400~1000 / VCE(sat)=-0.12 V / tf=180 ns / PW-Mini
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| Tech specs |
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Official Product Page
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Toshiba, Corp.
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| Part No. |
TC58512FT
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| Description |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 马鞍山暂定东芝数字集成电路硅栅CMOS 512-MBIT (64M x 8 BITS) CMOS NAND E2PROM
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| File Size |
422.80K /
43 Page |
View
it Online |
Download Datasheet
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