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  silicon carbide junction trans Datasheet PDF File

For silicon carbide junction trans Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    INFINEON[Infineon Technologies AG]
Part No. Q67040-S4374 SDB20S30 Q67040-S4419 SDP20S30 SDB20S30SMD
Description silicon carbide Schottky Diodes - 2x10A diode in TO263 package
silicon carbide Schottky Diodes - 2x10A diode in TO220-3 package
From old datasheet system

File Size 204.92K  /  8 Page

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    Ametherm, Inc.
Part No. SL1222101-A SL1222101-B
Description trans,WALL,24VDC/400mA,F2, 2.1mm x 5.5mm,UL 50/cs 电路保护热敏电阻
trans,WALL,24VDC/500mA,F1 2.1mmX5.5mm,UL
trans,WALL,18VDC/1A,F2,2.5X5.5 ,2 PRNG AC,LIN NON-REG

File Size 24.75K  /  1 Page

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    EC3A01H

Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
Part No. EC3A01H
Description N-Channel silicon junction FET - Electret Condenser Microphone Applications
junction FETs

File Size 33.03K  /  5 Page

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    Astrodyne, Inc.
Part No. PWB PWB-5000 PWB-5001 PWB-5005
Description trans,WALL,9VDC/300mA,F1, 2.5X5.5mm,UL/CUL
trans,WALL,9VDC/350mA,F2 2.1mm x 5.5 mm,UL/CUL
trans,WALL,12VDC/200MA,F2 2.1mm X 5.5mm,RT. ANGLE
trans,WALL,12VDC/200mA,LT GRAY F2,2.5mmX5.5mm,RANGL,UL/CSA 1-OUTPUT 5 W AC-DC REG PWR SUPPLY MODULE

File Size 484.60K  /  3 Page

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    Astrodyne, Inc.
Part No. PSP-500 PSP-500-5 PSP-500-15 PSP-500-24 PSP-500-48 PSP-500-27 PSP-500-12 ASTRODYNEINC.-PSP-500-48
Description transDUCER,MAG,1.5Vpp @ 10mA 2048HZ @ 80db,50ohm,2 PINS
trans,WALL,6VDC/500mA,M2 3.5mm,UL/CSA 100/cs
trans,WALL,5VDC/225mA,F2, 2.5mm x 5.5mm,UL/CSA 40/cs PFC和并行与500W的功
trans,WALL,REG,6VDC/200MA, 2.1mmX5.5mm,F2,UL/CUL PFC和并行与500W的功
trans,WALL,6VDC/500mA,F1, 2.1mm X 5.5mm,UL,CULC-NEG PFC和并行与500W的功
trans,WALL,6VDC/500mA,F2 2.1mm x 5.5mm,UL/CSA 50/cs PFC和并行与500W的功
CONN,DSUB,.590&quot;RT,25P-M, LONG,METAL HOUSING W/PC TABS PFC和并行与500W的功

File Size 434.06K  /  3 Page

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    Astrodyne, Inc.
Part No. PV15-24S PV15-15S PV15-5S PV15-48S
Description trans,WALL,9VDC/200mA,F1 2.1mm X 55mm,UL/CSA(CTR-NEG)
trans,WALL,REG,6VDC/1A 2.1mmX5.5mm,CTR POS,UL/CSA
trans,WALL,9VDC/200mA, M2,3.5mm,UL/CSA
trans,WALL,9VDC/300mA,F2, 2.5mmX5.5mm,UL/ULC
trans,WALL,9VDC/300mA,F2 2.1mm X 5.5mm,UL/CSA

File Size 446.95K  /  3 Page

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    Infineon
Part No. SDP10S30 SDB10S30SMD SDT10S30
Description silicon carbide Schottky Diodes - 10A diode in TO220-3 package
silicon carbide Schottky Diodes - 10A diode in TO263 package
silicon carbide Schottky Diodes - 10A diode in TO220-2 package

File Size 575.47K  /  9 Page

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    CREE POWER
Part No. W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

File Size 273.34K  /  17 Page

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    NXPSC10650-15

NXP Semiconductors
Part No. NXPSC10650-15
Description silicon carbide Diode

File Size 151.64K  /  9 Page

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    SSR20C100CT

Solid States Devices, Inc
Part No. SSR20C100CT
Description Schottky silicon carbide

File Size 78.69K  /  2 Page

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For silicon carbide junction trans Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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