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意法半导
STMicroelectronics
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| Part No. |
M93C46-DS3G_S M93C46-DS3G_W M93C46-DS3P_S M93C46-DS3P_W M93C46-DS3TG_S M93C46-DS3TG_W M93C46-DS3TP_S M93C46-DS3TP_W M93C46-DS6G_S M93C46-DS6G_W M93C46-DS6P_W M93C46-DS6TG_S M93C46-DS6TG_W M93C46-DS6TP_S M93C46-DS6TP_W M93C46-DW3G_S M93C46-DW3G_W M93C46-DW3P_S M93C46-DW3P_W M93C46-RMB3G_S M93C46-RMB3G_W M93C46-RMB3P_S M93C46-RMB3P_W M93C46-RMB3TG_S M93C46-RMB3TG_W M93C46-RMB3TP_S M93C46-RMB3TP_W M93C46-RMB6G_S M93C46-RMB6G_W M93C46-RMB6P_S M93C46-RMB6P_W M93C46-RMB6TG_S M93C46-RMB6TG_W M93C66-MB3G_S M93C66-MB3G_W M93C66-MB3P_S M93C66-MB3P_W M93C66-MB3TG_S M93C66-MB3TG_W M93C66-MB3TP_S M93C66-MB3TP_W M93C66-MB6G_S M93C66-MB6G_W M93C66-MB6P_S M93C66-MB6P_W M93C66-MB6TG_S M93C66-MB6TG_W M93C66-RMB3G_S M93C66-RMB3G_W M93C66-RMB3P_S M93C66-RMB3P_W M93C66-RMB3TG_S M93C66-RMB3TG_W M93C66-RMB3TP_S M93C66-RMB3TP_W M93C66-RMB6G_S M93C66-RMB6G_W M93C76-MB3G_S M93C76-MB3G_W M93C76-MB3P_S M93C76-MB3P_W M93C76-MB3TG_S M93C76-MB3TG_W M93C76-MB3TP_S M93C76-MB3TP_W M93C76-MB6G_S M93C76-MB6G_W M93C76-MB6P_S M93C76-MB6P_W M93C76-MB6TG_S M93C76-MB6TG_W M93C76-RMB3G_S M93C76-RMB3G_W M93C76-RMB3P_S M93C76-RMB3P_W M93C76-RMB3TG_S M93C76-RMB3TG_W M93C76-RMB3TP_S M93C76-RMB3TP_W M93C76-RMB6G_S M93C76-RMB6G_
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| Description |
256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
512 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8
1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIREserial access EEPROM
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE? serial access EEPROM
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE庐 serial access EEPROM
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE垄莽 serial access EEPROM
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| File Size |
278.87K /
38 Page |
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it Online |
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Grayhill, Inc.
GRAYHILL INC
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| Part No. |
38CDP72AP4V2QT 38CDP72AP4M2QT 38CDP72AP4S2GT 38CDP72AP4M2GT 38CDP72AP4M7QT 38CDP72AP4M3QT 38CDP72AP4S6GT 38CDP72AP4M6QT 38CDP72AP4M6GT 38CDP72AP4S2QT 38CDP72AP4S6QT 38CDP72AP4V3QT 38CDP72AP4M3GT 38CDP72AP4M7GT 38CDP72AP4V2GT 38CDP72AP4M1GT 38CDP72AP4M1QT 38CSP71B20S6QT 38CSP70B20S6RT
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| Description |
PUSHBUTTON SWITCH, DPDT, MOMENTARY, 3A, 28VDC, THROUGH HOLE-STRAIGHT ROHS COMPLIANT
PUSHBUTTON SWITCH, DPDT, MOMENTARY, 3A, 28VDC, THROUGH HOLE-RIGHT ANGLE ROHS COMPLIANT
PUSHBUTTON SWITCH, DPDT, MOMENTARY, 3A, 28VDC, PANEL MOUNT ROHS COMPLIANT
PUSHBUTTON SWITCH, SPDT, MOMENTARY, 3A, 28VDC, THROUGH HOLE-RIGHT ANGLE
PUSHBUTTON SWITCH, SPDT, MOMENTARY, 0.02A, 20VDC, THROUGH HOLE-RIGHT ANGLE
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| File Size |
160.90K /
5 Page |
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it Online |
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意法半导
EEPROM
STMicroelectronics N.V.
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| Part No. |
M24C08-W M24C08-R M24C08-WMN6 M24C08-WMN6TP M24C04WMN1T M24C04WMN3T M24C04WMN6T M24C02-WMN3_S M24C02-WMN3G_S M24C02-WMN3P M24C02-WMN3P_S M24C02-WMN3T_S M24C02-WMN3TG_S M24C02-WMN6_W M24C04-WMN6 M24C04-LBN6T M24C04-LBN3T M24C02 M24C01 M24C08 M24C04-LMN3T M24C04-LMN6T M24C08-RBN6 M24C08-RBN3/W M24C08-RBN6/W M24C08-RBN6T M24C08-RBN3P M24C08-RBN3T M24C08-RBN6G M24C08-RBN6/S M24C08-RBN3/S M24C08-RBN3G M24C08-RBN6P M24C16-DW6T M24C16-DW3T M24C16-SDW6T M24C16-SDW3T M24C16-SDS3T M24C16-SDS6T M24C04-WBN6TP/W M24C08-MN6T M24C08-MN3T M24C02-WBN6T/W M24C04-RMN3T/W M24C04-RBN6TP/W M24C04-WBN6TP/S M24C08-WDS3 M24C08-WDS3G M24C08-WDS6 M24C08-WMN6TP/W M24C08-WDW6P M24C04-RMN6TP/S M24C08-WDS6G M24C08-WDS6P M24C08-WDW6G M24C08-WDW3 M24C08-RBN6T/W M24C08-WDW3P M24C08-WDS3/W M24C04-RMN3TP/S M24C08-WDW3G M24C08-WDS3/S M24C01-RBN6TP/W M24C08-WDS3P M24C01-WMN3TP/S M24C01-WDW6TP/S M24C01-WMN6TP/S M24C01-RBN3TP/S M24C04-RBN6T/W M24C04-RDS3G M24C04-WBN6T/W M24C04-RDS6P M24C04-RDW3 M24C04-RDW6 M24C04-WMN6TP/W M24C04-RDS6T M24C04-RDS3T M24C04-RDS6G M24C02-WMN3/S M24C02-WMN6/W M24C08-WBN3G/S M24C16-WBN3G/S M24C16-RBN3G/S M24C01-RBN3G/S M24C01-WBN3G/S M24C02-RBN3G/S M24C02-WBN3G/S M24C04-RBN3G/S M24C04-WBN3G/S
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| Description |
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM
Microprocessor Crystal; Frequency:22.1184MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
Microprocessor Crystal; Frequency:48MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
CRYSTAL 9.84375MHZ 10PF SMD
UHF power transistor
NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V
CRYSTALS 20/0.035 -40 85 12.5P 32.768KHZ 3.2X1.5X0.8MM 2 PAD
MMIC variable gain amplifier
AB 3C 3#12 SKT RECP
Microprocessor Crystal; Frequency:8.192MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Microprocessor Crystal; Frequency:8MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz, with voltage regulator
Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
XTL, OSC, 50.000 MHZ, 100PPM
Microprocessor Crystal; Frequency:27MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
CONNECTOR ACCESSORY
PNP/PNP matched double transistors
IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,SIP
AB 17C 17#16 PIN RECP
45 V, 100 mA NPN general-purpose transistors
NPN/PNP general purpose transistor - Description: Matched Pair
IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,M:ML043MW015
CRYSTAL 4.897MHZ 20PF SMD
Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V
Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V
POT 200 OHM 3/4 RECT CERM MT
Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V
Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 600 V
Microprocessor Crystal; Frequency:50MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Microprocessor Crystal; Frequency:6MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Microprocessor Crystal; Frequency:5MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:50ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V
Solder Masking Agent; Dispensing Method:Jar; Features:For Lead-Free Applications; Used w/Tin/Lead Solders; Provides Short-Term High-Temp. Protection; Leaded Process Compatible:Yes; Volume:1gallon (US) RoHS Compliant: Yes
CRYSTAL 6.7458MHZ 20PF SMD
Microprocessor Crystal; Frequency:3.579545MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:180ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
RES ARRAY 24 OHM 8TRM 4RES SMD
SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 15kV/us; Package: SOIC-W; No of Pins: 8; Container: Box
NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 14 mA; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22.1@f1 dB; Ptot: 300
High-speed switching diodes - Cd max.: 1.5 pF; Configuration: quad c.c./c.c. ; IF max: 250 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V
Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V
Low-leakage diode - Cd max.: 2 pF; Configuration: single ; IF max: 200 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA mV; VR max: 75 V
Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V
NPN 7GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 100 mA; fT: 7 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 150 mA; Ptot: 1000 mW; Polarity: NPN ; VCE: 10 V; VThyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V
NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V
Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual series ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Thyristors logic level - IGT: 0.2 mA; IT (RMS): 8 A; VDRM: 500 V
Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V
Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
Schottky barrier diode - Cd max.: 90@VR=0V pF; Configuration: single ; IF: 0.5 A; IFSM max: 2 A; IR max: 0.1@VR=35V mA; VFmax: 550@IF=0.5A mV; VR: 40 V
AB 4C 4#12 PIN PLUG
Single 12 bits ADC, up to 40 MHz, 55 MHz or 70 MHz
Silicon PIN diode
NPN 14 GHz wideband transistor
PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V
HDWR PLATE SER 3 FRNT MNT BLK
OSCILLATORS 50PPM 0 70 3.3V 4 33.000MHZ TS 5X7MM 4PAD SMD
Thyristors; logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 1.0 A; VDRM: 600 V
Thyristor logic level - IGT: 0.05 mA; IT (RMS): 0.8 A; VDRM: 400 V; VRRM: 400 V
Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 200 V
Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 400 V
16KbitKbitKbitKbit1Kbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
8-Pin SOIC High Speed - 10 MBit/s Logic Gate Output Optocoupler 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS
HDWR SPACER REAR MNT SER 3 BLK 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
AB 7C 7#12 PIN PLUG 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
RECTIFIER SBR DUAL 40A 40V 280A-ifsm 530mV-vf 0.5mA-ir ITO-220AB 50/TUBE 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
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| File Size |
144.80K /
25 Page |
View
it Online |
Download Datasheet |
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IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
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| Part No. |
IDT709279S12PF IDT709279S12PFI IDT709279L12PF IDT709279L12PFI IDT709279S9PFI IDT709269 IDT709269L IDT709269L12G IDT709269L12GI IDT709269L12PF IDT709269L12PFI IDT709269L15G IDT709269L15GI IDT709269L15PF IDT709269L15PFI IDT709269L6G IDT709269L6GI IDT709269L6PF IDT709269L6PFI IDT709269L7G IDT709269L7GI IDT709269L7PF IDT709269L7PFI IDT709269L9G IDT709269L9GI IDT709269L9PF IDT709269L9PFI IDT709269S IDT709269S12G IDT709269S12GI IDT709269S12PF IDT709269S12PFI IDT709269S15G IDT709269S15GI IDT709269S15PF IDT709269S15PFI IDT709269S6G IDT709269S6GI IDT709269S6PF IDT709269S6PFI IDT709269S7G IDT709269S7GI IDT709269S7PF IDT709269S7PFI IDT709269S9G IDT709269S9GI IDT709269S9PF IDT709269S9PFI IDT709279 IDT709279L IDT709279L12G IDT709279L12GI IDT709279L15G IDT709279L15GI IDT709279L15PF IDT709279L15PFI IDT709279L6G IDT709279L6GI IDT709279L6PF IDT709279L6PFI IDT709279L7G IDT709279L7GI IDT709279L7PF IDT709279L7PFI IDT709279L9G IDT709279L9GI IDT709279L9PF IDT709279L9PFI IDT709279S IDT709279S12G IDT709279S12GI IDT709279S15G IDT709279S15GI IDT709279S15PF IDT709279S15PFI IDT709279S6G IDT709279S6GI IDT709279S6PF IDT709279S6PFI IDT709279S7G IDT709279S7GI IDT709279S7PF IDT709279S7PFI IDT709279S9G IDT709279S9G
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| Description |
32K x 16 Sync, Dual-Port RAM, PipeLined/Flow-Through
16K x 16 Sync, Dual-Port RAM, PipeLined/Flow-Through
HIGH-SPEED 16K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM 16K X 16 DUAL-PORT SRAM, 25 ns, PQFP100
HIGH-SPEED 32/16K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 16K X 16 DUAL-PORT SRAM, 20 ns, CPGA108
HIGH-SPEED 32/16K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 32K X 16 DUAL-PORT SRAM, 20 ns, CPGA108
HIGH-SPEED 16K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM 16K X 16 DUAL-PORT SRAM, 30 ns, PQFP100
HIGH-SPEED 32/16K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 16K X 16 DUAL-PORT SRAM, 18 ns, CPGA108
HIGH-SPEED 32/16K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 16K X 16 DUAL-PORT SRAM, 18 ns, PQFP100
HIGH-SPEED 32/16K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 32K X 16 DUAL-PORT SRAM, 20 ns, PQFP100
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| File Size |
310.94K /
18 Page |
View
it Online |
Download Datasheet |
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Bom2Buy.com
Price and Availability
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JITONG
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(CHINA HK & SZ)
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| Part: S6000 |
| Maker: N/A |
| Pack: N/A |
| Stock: 56 |
| Unit price
for : |
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50: $1.27 |
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100: $1.21 |
| 1000:
$1.15 |
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