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  rg-62 u Datasheet PDF File

For rg-62 u Found Datasheets File :: 3185    Search Time::1.625ms    
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    IRF9520N

IRF[International Rectifier]
Part No. IRF9520N
OCR Text ...DD = -50V --- ID = -4.0A ns --- RG = 22 --- RD = 12, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die co...62 (.10 3) 4 1 5.24 (.60 0) 1 4.84 (.58 4) 1.15 (.04 5) M IN 1 2 3 L E A D A S S IG NM E NT...
Description Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

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    IRF9530N

IRF[International Rectifier]
Part No. IRF9530N
OCR Text ...DD = -50V --- ID = -8.4A ns --- RG = 9.1 --- RD = 6.2, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die ...62 (.10 3) 4 1 5.24 (.60 0) 1 4.84 (.58 4) 1.15 (.04 5) M IN 1 2 3 L E A D A S S IG NM E NT...
Description Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 109.25K  /  8 Page

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    IRF9540N IRF9540 IRF9540NPBF

IRF[International Rectifier]
Part No. IRF9540N IRF9540 IRF9540NPBF
OCR Text ...VDD = -50V --- ID = -11A ns --- RG = 5.1 --- RD = 4.2, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die ...62 (.10 3) 4 1 5.24 (.60 0) 1 4.84 (.58 4) 1.15 (.04 5) M IN 1 2 3 L E A D A S S IG NM E NT...
Description -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)

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    IRF9952

IRF[International Rectifier]
Part No. IRF9952
OCR Text ...N-Channel VDD = 10V, ID = 1.0A, RG = 6.0, RD = 10 ns P-Channel VDD = -10V, ID = -1.0A, RG = 6.0, RD = 10 N-Channel V GS = 0V, VDS = 15V, = ...62 T J = 25C, IF = -1.25A, di/dt = 100A/s Repetitive rating; pulse width limited by Notes: ...
Description Power MOSFET(Vdss= -30V)

File Size 128.20K  /  10 Page

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    IRF9953

IRF[International Rectifier]
Part No. IRF9953
OCR Text ... -10V 14 28 ID = -1.0A ns 20 40 RG = 6.0 6.9 14 RD = 10 190 --- VGS = 0V 120 --- pF VDS = -15V 61 --- = 1.0MHz, See Fig. 5 Source-Drain...62 V ns nC --- 0.82 --- 27 --- 31 Conditions D MOSFET symbol showing the integral reverse G p-n j...
Description Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)

File Size 98.36K  /  7 Page

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    IRF9956

IRF[International Rectifier]
Part No. IRF9956
OCR Text ...12 VDD = 10V 18 ID = 1.0A ns 26 RG = 6.0 6.0 RD = 10 --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz, See Fig. 9 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Sou...
Description Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)

File Size 98.88K  /  7 Page

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    IRF9Z24N IRF9Z24NPBF

IRF[International Rectifier]
Part No. IRF9Z24N IRF9Z24NPBF
OCR Text ...D = -28V --- I D = -7.2A ns --- RG = 24 --- RD = 3.7, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings an...
Description -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

File Size 105.16K  /  8 Page

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    IRF9Z34N IRF9Z34NPBF

International Rectifier
Part No. IRF9Z34N IRF9Z34NPBF
OCR Text ...DD = -28V --- I D = -10A ns --- RG = 13 --- RD = 2.6, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings an...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.35K  /  8 Page

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    ST Microelectronics
Part No. STW8NB100
OCR Text ...nditions VDD = 500V, ID = 3.5 A RG = 4.7, VGS = 10V (see test circuit, Figure 3) VDD = 800V, ID = 7 A, VGS = 10V, RG = 4.7 Min. Typ. 32 13 6...62 0.79 0.17 TYP MAX. 5.15 2.60 0.80 1.40 MIN. 0.19 0.08 0.015 0.04 0.11 0.07 0.09 0.13 inch TYP. MA...
Description N-CHANNEL 1000V - 1.3 OHM - 7.3A - TO-247 POWERMESH MOSFET

File Size 253.36K  /  9 Page

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    2SJ448

NEC[NEC]
Part No. 2SJ448
OCR Text ...rain ** Starting Tch = 25 C, RG = 25 , VGS = -20 V 0 Gate Body Diode Gate Protection Diode Source Document No. D10029EJ1V0DS...62.5 C/W 100 10 Rth(ch-c) = 4.17 C/W 1 0.1 0.01 Single Pulse 0.001 10 100 1m 10 m 100 m 1...
Description SWITCHING P-CHANNEL POWER MOS FET INDuSTRIAL uSE

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