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  rg-178 Datasheet PDF File

For rg-178 Found Datasheets File :: 958    Search Time::1.86ms    
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    TRIQUINT[TriQuint Semiconductor]
Part No. TGF2021-04
OCR Text ...Gate Cgs Rgs Ri + Rds gm vi Cds Rg Cdg Rd Ld Drain TGF2021-04 vi - VvAC@HUApryy SrsrrprAQyhr Ls Rp, Cp Rs Source Gate ...178.24 1.686 54.67 -36.087 -1.70 -4.152 -164.31 6.5 -0.343 -178.56 0.891 51.78 -36.275 -1.48 -3.962 ...
Description DC - 12 GHz Discrete power pHEMT

File Size 117.63K  /  8 Page

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    NEC, Corp.
NEC[NEC]
Part No. NE960R275 NE960R200 NE960R2 NE961R200
OCR Text ...B) f = 14.5 GHz, VDS = 9.0 V Rg = 1 k IDset = 90 mA (RF OFF) 22.0 - - 24.0 25.0 dBm dBm add GL 35 % 8.0 10.0 ...178 178 175 173 170 S21 ANG. (deg.) -166 -147 -135 -109 -82 -54 -29 1 30 56 82 104 129 165 -165 -137...
Description 0.2 W X, Ku-BAND POWER GaAs MES FET 0.2蜡质Ku波段功率GaAs场效应晶体管
0.2 W X Ku-BAND POWER GaAs MES FET

File Size 60.83K  /  12 Page

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    TC1606

Transcom, Inc.
Part No. TC1606
OCR Text ... 500 ma schemati cgs cgd cds rg rd rds ri rs gm t lg ld ls parameters lg 0.0196 nh rs 0.197 ohm rg 0.225 ohm ls 0.005 nh cgs 8.87 pf cds 1.073 pf ri 0.455 ohm rds 31.85 ohm cgd 0.361 pf rd 0.315 ohm gm 880.6 ms l...
Description 2W High Linearity and High Efficiency GaAs Power FETs

File Size 145.64K  /  4 Page

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    TC1601

Transcom, Inc.
Part No. TC1601
OCR Text ...g = 0.0035 nh rs = 0.23 ohm rg = 0.3 ohm ls = 0.0013 nh cgs = 7.84 pf cds = 0.864 pf ri = 0.487 ohm rds = 51 ohm cgd = 0.44 pf rd = 0.402 ohm gm = 840 ms ld = 0.006 nh t = 3.9 psec rg rd rs ri rds ls ld lg cg...
Description 2W High Linearity and High Efficiency GaAs Power FETs

File Size 104.40K  /  4 Page

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    FLL21E045IY

Eudyna Devices Inc
Part No. FLL21E045IY
OCR Text ... VDS IGF IGR T ch Condition RG=2 RG=2 Limit <28 <176 >-15.9 155 Unit V mA mA o C ELECTRICAL CHARACTERISTICS (Case Temperature ...178.32 0.676 -25.53 0.007 68.02 0.928 -177.31 0.903 -179.71 0.858 -34.12 0.008 60.18 0.922 -178.49 0...
Description L,S-band High Power GaAs FET

File Size 302.71K  /  6 Page

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    FLL21E010MK

Eudyna Devices Inc
Part No. FLL21E010MK
OCR Text ... VDS IGF IGR Tch Condition RG=50 RG=50 Limit <28 <47 >-2.5 155 Unit V mA mA oC ELECTRICAL CHARACTERISTICS (Case Temperatur...178.8 1.688 7.8 0.003 60.6 0.839 -162.2 1.5 0.956 -179.6 1.526 4.5 0.005 65.7 0.854 -164.2 1.6 0.952...
Description High Voltage - High Power GaAs FET

File Size 304.62K  /  6 Page

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    FLL21E004ME

Eudyna Devices Inc
Part No. FLL21E004ME
OCR Text ... VDS IGF IGR Tch Condition RG=100 RG=100 Limit <28 <6.1 >-1.0 155 Unit V mA mA oC ELECTRICAL CHARACTERISTICS (Case Temperatu...178.0 1.598 13.4 0.009 93.0 0.819 -123.8 1. 0 1.95 0.935 -178.4 1.545 11.9 0.011 90.1 0.826 -125.6 2...
Description High Voltage - High Power GaAs FET

File Size 248.36K  /  6 Page

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    NE6501077

NEC[NEC]
ETC
Part No. NE6501077
OCR Text ...Resistance SYMBOL VDS Tch Gcomp Rg MIN. - - - - TYP. 10 - - - MAX. 10 130 3 100 UNIT V C dBcomp ELECTRICAL CHARACTERISTICS (TA = 25 C) ...178.5 176.1 176.1 174.5 172.6 170.8 169.2 167.4 166.0 164.6 162.6 161.3 159.7 158.5 156.8 154.7 153....
Description 10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
10 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

File Size 36.45K  /  6 Page

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    MACOM[Tyco Electronics]
Part No. TGF2021-08
OCR Text ...Gate Cgs Rgs Ri + Rds gm vi Cds Rg Cdg Rd Ld Drain TGF2021-08 vi - VvAC@HUApryy SrsrrprAQyhr Ls Rp, Cp Rs Source Gate ...178.14 1.917 67.41 -40.175 -2.98 -2.561 -174.21 4 -0.204 -178.44 0.662 64.08 -40.335 -3.39 -2.475 -1...
Description DC - 12 GHz Discrete power pHEMT

File Size 139.27K  /  8 Page

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    EUDYNA[Eudyna Devices Inc]
Part No. EGN045MK
OCR Text ...re r P im l e Condition RG=10 RG=10 Vp VGDO P3dB d GL Rth a in Rating Limit 50 <9.7 >-3.6 200 120 -5 75.0 -65 to +175 250 ...178.6 0.914 179.9 0.919 178.0 0.924 176.7 0.924 175.3 0.927 174.0 0.933 173.2 0.934 172.1 0.929 171....
Description High Voltage - High Power GaN-HEMT

File Size 205.87K  /  3 Page

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For rg-178 Found Datasheets File :: 958    Search Time::1.86ms    
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