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rf-mosfet Datasheet PDF File

For rf-mosfet Found Datasheets File :: 1952 Search Time::1.563ms
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				MOTOROLA[Motorola, Inc]
Part No.	MRF175GU MRF175GV
OCR Text	RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband perform...
Description	N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	183.29K / 8 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF175GV MRF175GU
OCR Text	RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband perform...
Description	From old datasheet system N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	210.44K / 11 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF175LU MRF175LV
OCR Text	RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband perf...
Description	N-CHANNEL BROADBAND RF POWER FETs
File Size	137.22K / 8 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF175LV MRF175LU
OCR Text	RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband perf...
Description	N-CHANNEL BROADBAND RF POWER FETs
File Size	143.35K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF176 MRF176GU MRF176GV
OCR Text	RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband perform...
Description	N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	176.10K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF177
OCR Text	RF MOSFET Line RF Power Field Effect Transistors MRF177 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement Mode MOSFET Designed for broadband commercial and military applications up to 400 MHz frequenc...
Description	N-CHANNEL BROADBAND RF POWER MOSFET
File Size	184.73K / 6 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18030A MRF18030ALR3 MRF18030ALSR3
OCR Text	RF MOSFET Line RF Power Field Effect Transistors MRF18030ALR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ALSR3 Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, ...
Description	SEE A3282EUA-T CHOPPER STABILIZED LATCH W/TIN PLATING SEE A3282ELHLT-T RF Power Field Effect Transistors
File Size	504.66K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3
OCR Text	RF Power Field Effect Transistors MRF18060AR3 N-Channel Enhancement-Mode Lateral MOSFETs MRF18060ALSR3 Designed for PCN and PCS base station...MOSFET Line applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. S...
Description	MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs RF POWER FIELD EFFECT TRANSISTORS
File Size	399.98K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3
OCR Text	RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PC...
Description	HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes RF Power Field Effect Transistors
File Size	486.59K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18085B MRF18085BLSR3 MRF18085BR3
OCR Text	RF MOSFET Line RF Power Field Effect Transistors Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. * GSM and GSM EDGE Performa...
Description	RF Power Field Effect Transistors
File Size	607.07K / 12 Page	View it Online	Download Datasheet

For rf-mosfet Found Datasheets File :: 1952 Search Time::1.563ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |