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  oxide-nitride Datasheet PDF File

For oxide-nitride Found Datasheets File :: 132    Search Time::5.5ms    
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    ARF1510

Advanced Power Technology
Part No. ARF1510
OCR Text ...d mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domesti...
Description RF POWER MOSFET

File Size 79.23K  /  2 Page

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    ARF1510

Advanced Power Technology
Part No. ARF1510
OCR Text ... mounting surface is beryllium oxide, beo. beryllium oxide dust is toxic when inhaled. care must be taken during handling and mounting to avoid damage to this area. these devices must never be thrown away with general industri- al o...
Description RF Power Transistors: INDUSTRIAL, SCIENTIFIC, MEDICAL (ISM) & HF COMMUNICATIONS

File Size 79.14K  /  2 Page

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    ARF1505

Advanced Power Technology
Part No. ARF1505
OCR Text ...d mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area . These devices must never be thrown away with general industrial or domest...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 121.76K  /  4 Page

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    ARF1501

Advanced Power Technology Ltd.
Part No. ARF1501
OCR Text ...d mounting surface is beryllium oxide. Beryllium oxide dust is highly toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domes...
Description RF POWER MOSFET 250V 1500W 40MHz
RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
ER 3C 3#16S SKT RECP

File Size 112.99K  /  2 Page

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    ARF1505

Advanced Power Technology
Part No. ARF1505
OCR Text ...d mounting surface is beryllium oxide, beo. beryllium oxide dust is toxic when in- haled. care must be taken during handling and mounting to avoid damage to this area . these devices must never be thrown away with general industrial or...
Description RF Power Transistors: INDUSTRIAL, SCIENTIFIC, MEDICAL (ISM) & HF COMMUNICATIONS

File Size 46.71K  /  3 Page

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    ARF150105 ARF1501

Advanced Power Technology
Part No. ARF150105 ARF1501
OCR Text ...d mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area These devices must never be thrown away with general industrial or domestic...
Description VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

File Size 149.93K  /  4 Page

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    ARF1500

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Part No. ARF1500
OCR Text ...d mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area . These devices must never be thrown away with general industrial or domest...
Description RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

File Size 124.01K  /  4 Page

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    ARF1502

ADPOW[Advanced Power Technology]
Part No. ARF1502
OCR Text ...d mounting surface is beryllium oxide. Beryllium oxide dust is highly toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domes...
Description RF POWER MOSFET 65V 1500W 40MHz
RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

File Size 113.13K  /  2 Page

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    VRF3933

Microsemi Corporation
Part No. VRF3933
OCR Text ...low the lead plane is beryllium oxide. beryllium oxide dust is highly toxic when inhaled. care must be taken during handling and mounting to avoid damage to this area. these devices must never be thrown away with general industrial or d...
Description RF POWER VERTICAL MOSFET

File Size 646.85K  /  6 Page

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